參數(shù)資料
型號(hào)： BUK664R4-55C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 55 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁(yè)數(shù)： 6/16頁(yè)
文件大小： 216K
代理商： BUK664R4-55C
BUK664R4-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 21 December 2010
6 of 16
NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source breakdown voltage I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 11
; see
Figure 12
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
D
= 2.5 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
drain leakage current
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
gate leakage current
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -15 V; V
DS
= 0 V; T
j
= 25 °C
drain-source on-state resistance V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 13
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 14
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 14
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 14
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 15
; see
Figure 14
Dynamic characteristics
Q
G(tot)
total gate charge
55
27
50
1.8
-
-
-
2.3
-
-
-
2.8
V
V
V
V
V
GS(th)
0.5
-
-
V
1.1
1.5
2
V
V
GSth
-
-
3.3
V
0.8
-
-
V
I
DSS
-
-
-
-
-
-
-
-
-
-
2
2
2
11.1
1
500
500
100
100
100
13
μA
μA
μA
nA
nA
nA
m
I
GSS
R
DSon
-
11.4
12
m
-
4.2
4.9
m
-
5.2
6.6
m
-
5.7
7.7
m
-
10
11.7
m
-
-
10.8
m
I
D
= 45 A; V
DS
= 15 V; V
GS
= 4.5 V;
T
j
= 25 °C; see
Figure 16
;
see
Figure 17
I
D
= 25 A; V
DS
= 44 V; V
GS
= 5 V;
see
Figure 18
; see
Figure 17
I
D
= 25 A; V
DS
= 44 V; V
GS
= 10 V;
see
Figure 17
; see
Figure 18
-
5.9
-
C
-
67
-
nC
-
124
-
nC
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參數(shù)描述
BUK664R4-55C,118 功能描述:MOSFET N-CHAN 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK664R6-40C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V80ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,80A,SOT404 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK
BUK664R6-40C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK664R8-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404
BUK664R8-75C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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