參數(shù)資料
型號(hào)： ATMEGA329V-8MUR
廠商： Atmel
文件頁數(shù)： 13/146頁
文件大?。?/td> 0K
描述： MCU AVR 32K FLASH 8MHZ 64QFN
產(chǎn)品培訓(xùn)模塊： megaAVR Introduction
標(biāo)準(zhǔn)包裝： 4,000
系列： AVR® ATmega
核心處理器： AVR
芯體尺寸： 8-位
速度： 8MHz
連通性： SPI，UART/USART，USI
外圍設(shè)備： 欠壓檢測(cè)/復(fù)位，LCD，POR，PWM，WDT
輸入/輸出數(shù)： 54
程序存儲(chǔ)器容量： 32KB（16K x 16）
程序存儲(chǔ)器類型： 閃存
EEPROM 大?。?/td> 1K x 8
RAM 容量： 2K x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 64-VFQFN 裸露焊盤
包裝： 帶卷 (TR)
其它名稱： ATMEGA329V-8MUR-ND
ATMEGA329V-8MURTR
20
2552K–AVR–04/11
ATmega329/3290/649/6490
Figure 7-3.
On-chip Data SRAM Access Cycles
7.3
EEPROM Data Memory
The ATmega329/3290/649/6490 contains 1/2K bytes of data EEPROM memory. It is organized
as a separate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
For a detailed description of SPI, JTAG and Parallel data downloading to the EEPROM, see
page 308, page 313, and page 296 respectively.
7.3.1
EEPROM Read/Write Access
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in Table 7-1. A self-timing function, however,
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, V
CC is likely to rise or fall slowly on power-up/down. This causes the device for some
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
See “Preventing EEPROM Corruption” on page 21. for details on how to avoid problems in these
situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
7.3.2
EEPROM Write During Power-down Sleep Mode
When entering Power-down sleep mode while an EEPROM write operation is active, the
EEPROM write operation will continue, and will complete before the Write Access time has
passed. However, when the write operation is completed, the clock continues running, and as a
clk
WR
RD
Data
Address
Address valid
T1
T2
T3
Compute Address
Read
Wr
ite
CPU
Memory Access Instruction
Next Instruction
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