
PIC16F84A
DS35007B-page 76
2001 Microchip Technology Inc.
APPENDIX B:
CONVERSION CONSIDERATIONS
Considerations for converting from one PIC16X8X
device to another are listed in Table 1.
TABLE 1:
CONVERSION CONSIDERATIONS - PIC16C84, PIC16F83/F84, PIC16CR83/CR84,
PIC16F84A
Difference
PIC16C84
PIC16F83/F84
PIC16CR83/
CR84
PIC16F84A
Program Memory Size
1K x 14
512 x 14 / 1K x 14
512 x 14 / 1K x 14
1K x 14
Data Memory Size
36 x 8
36 x 8 / 68 x 8
36 x 8 / 68 x 8
68 x 8
Voltage Range
2.0V - 6.0V
(-40
°
C to +85
°
C)
2.0V - 6.0V
(-40
°
C to +85
°
C)
2.0V - 6.0V
(-40
°
C to +85
°
C)
2.0V - 5.5V
(-40
°
C to +125
°
C)
Maximum Operating Fre-
quency
10 MHz
10 MHz
10 MHz
20 MHz
Supply Current (I
DD
).
See parameter # D014 in
the electrical specs for
more detail.
I
DD
(typ) = 60
μ
A
I
DD
(max) = 400
μ
A
(LP osc, F
OSC
= 32 kHz,
V
DD
= 2.0V,
WDT disabled)
I
DD
(typ) = 15
μ
A
I
DD
(max) = 45
μ
A
(LP osc, F
OSC
= 32 kHz,
V
DD
= 2.0V,
WDT disabled)
I
DD
(typ) = 15
μ
A
I
DD
(max) = 45
μ
A
(LP osc, F
OSC
= 32 kHz,
V
DD
= 2.0V,
WDT disabled)
I
DD
(typ) = 15
μ
A
I
DD
(max) = 45
μ
A
(LP osc, F
OSC
= 32 kHz,
V
DD
= 2.0V,
WDT disabled)
Power-down Current
(I
PD
). See parameters #
D020, D021, and D021A
in the electrical specs for
more detail.
I
PD
(typ) = 26
μ
A
I
PD
(max) = 100
μ
A
(V
DD
= 2.0V,
WDT disabled, industrial)
I
PD
(typ) = 0.4
μ
A
I
PD
(max) = 9
μ
A
(V
DD
= 2.0V,
WDT disabled, industrial)
I
PD
(typ) = 0.4
μ
A
I
PD
(max) = 6
μ
A
(V
DD
= 2.0V,
WDT disabled, industrial)
I
PD
(typ) = 0.4
μ
A
I
PD
(max) = 1
μ
A
(V
DD
= 2.0V,
WDT disabled, industrial)
Input Low Voltage (V
IL
).
See parameters # D032
and D034 in the electrical
specs for more detail.
V
IL
(max) = 0.2V
DD
(OSC1, RC mode)
V
IL
(max) = 0.1V
DD
(OSC1, RC mode)
V
IL
(max) = 0.1V
DD
(OSC1, RC mode)
V
IL
(max) = 0.1V
DD
(OSC1, RC mode)
Input High Voltage (V
IH
).
See parameter # D040 in
the electrical specs for
more detail.
V
IH
(min) = 0.36V
DD
(I/O Ports with TTL,
4.5V
≤
V
DD
≤
5.5V)
V
IH
(min) = 2.4V
(I/O Ports with TTL,
4.5V
≤
V
DD
≤
5.5V)
V
IH
(min) = 2.4V
(I/O Ports with TTL,
4.5V
≤
V
DD
≤
5.5V)
V
IH
(min) = 2.4V
(I/O Ports with TTL,
4.5V
≤
V
DD
≤
5.5V)
Data EEPROM Memory
Erase/Write cycle time
(T
DEW
). See parameter #
D122 in the electrical
specs for more detail.
T
DEW
(typ) = 10 ms
T
DEW
(max) = 20 ms
T
DEW
(typ) = 10 ms
T
DEW
(max) = 20 ms
T
DEW
(typ) = 10 ms
T
DEW
(max) = 20 ms
T
DEW
(typ) = 4 ms
T
DEW
(max) = 8 ms
Port Output Rise/Fall
time (TioR, TioF). See
parameters #20, 20A,
21, and 21A in the elec-
trical specs for more
detail.
TioR, TioF (max) = 25 ns
(C84)
TioR, TioF (max) = 60 ns
(LC84)
TioR, TioF (max) = 35 ns
(C84)
TioR, TioF (max) = 70 ns
(LC84)
TioR, TioF (max) = 35 ns
(C84)
TioR, TioF (max) = 70 ns
(LC84)
TioR, TioF (max) = 35 ns
(C84)
TioR, TioF (max) = 70 ns
(LC84)
MCLR on-chip filter. See
parameter #30 in the
electrical specs for more
detail.
No
Yes
Yes
Yes
PORTA and crystal oscil-
lator values less than
500 kHz
For crystal oscillator con-
figurations operating
below 500 kHz, the device
may generate a spurious
internal Q-clock when
PORTA<0> switches
state.
N/A
N/A
N/A
RB0/INT pin
TTL
TTL/ST*
(*Schmitt Trigger)
TTL/ST*
(*Schmitt Trigger)
TTL/ST*
(*Schmitt Trigger)