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參數(shù)資料
| 型號： | 35007B |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 18-pin Enhanced FLASH/EEPROM 8-bit Microcontroller |
| 中文描述： | 18針/ EEPROM的8位微控制器的閃存 |
| 文件頁數(shù)： | 51/88頁 |
| 文件大小： | 1495K |
| 代理商： | 35007B |
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2001 Microchip Technology Inc.
DS35007B-page 49
PIC16F84A
9.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Ambient temperature under bias.............................................................................................................-55
°
C to +125
°
C
Storage temperature .............................................................................................................................. -65
°
C to +150
°
C
Voltage on any pin with respect to V
SS
(except V
DD
, MCLR, and RA4) .........................................-0.3V to (V
DD
+ 0.3V)
Voltage on V
DD
with respect to V
SS
........................................................................................................... -0.3 to +7.5V
Voltage on MCLR with respect to V
SS
(1)
.......................................................................................................-0.3 to +14V
Voltage on RA4 with respect to V
SS
........................................................................................................... -0.3 to +8.5V
Total power dissipation
(2)
.....................................................................................................................................800 mW
Maximum current out of V
SS
pin ...........................................................................................................................150 mA
Maximum current into V
DD
pin..............................................................................................................................100 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)
.....................................................................................................................±
20 mA
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
)
.............................................................................................................±
20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by
PORTA..........................................................................................................................80 mA
Maximum current sourced by PORTA.....................................................................................................................50 mA
Maximum current sunk by PORTB........................................................................................................................150 mA
Maximum current sourced by PORTB ..................................................................................................................100 mA
Note 1:
Voltage spikes below V
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
Thus, a series resistor of 50-100
should be used when applying a “l(fā)ow” level to the MCLR pin rather than
pulling this pin directly to V
SS
.
2:
Power dissipation is calculated as follows: Pdis = V
DD
x {I
DD
-
∑
I
OH
} +
∑
{(V
DD
-V
OH
) x I
OH
} +
∑
(V
O
l x I
OL
).
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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