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參數(shù)資料
| 型號： | μPD424210 |
| 廠商： | NEC Corp. |
| 英文描述： | 16 bits CMOS Dynamic RAM with Optional EDO.(16M 同步動態(tài)RAM) |
| 中文描述： | 16位的CMOS動態(tài)隨機(jī)存儲器的任擇易都。（1,600同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 7/48頁 |
| 文件大?。?/td> | 351K |
| 代理商： | ΜPD424210 |
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μ
PD424210
7
Cautions when using the hyper page mode (EDO)
1.
CAS access should be used to operate t
HPC
at the MIN. value.
2.
To make I/Os to Hi-Z in read cycle, it is necessary to control RAS, CAS, WE, OE as follows. The effective
specification depends on the state of each signal.
(1) Both RAS and CAS are inactive (at the end of read cycle)
WE: inactive, OE: active
t
OFC
is effective when RAS is inactivated before CAS is inactivated.
t
OFR
is effective when CAS is inactivated before RAS is inactivated.
The slower of t
OFC
and t
OFR
becomes effective.
(2) Both RAS and CAS are active or either RAS or CAS is active (in read cycle)
WE, OE: inactive ····· t
OEZ
is effective.
Both RAS and CAS are inactive or RAS is active and CAS is inactive (at the end of read cycle)
WE, OE: active and either t
RRH
or t
RCH
must be met ····· t
WEZ
and t
WPZ
are effective.
The faster of t
OEZ
and t
WEZ
becomes effective.
The faster of (1) and (2) becomes effective.
3.
In read cycle, the effective specification depends on the state of CAS signal when controlling data output
with the OE signal.
(1) CAS: inactive, OE: active ····· t
CHO
is effective.
(2) CAS, OE: active ····· t
OCH
is effective.
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