參數(shù)資料
型號(hào): μPD424210
廠商: NEC Corp.
英文描述: 16 bits CMOS Dynamic RAM with Optional EDO.(16M 同步動(dòng)態(tài)RAM)
中文描述: 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的任擇易都。(1,600同步動(dòng)態(tài)RAM)的
文件頁數(shù): 11/48頁
文件大小: 351K
代理商: ΜPD424210
μ
PD424210
11
Common to Read, Write, Read Modify Write Cycle
Parameter
Symbol
t
RAC
= 60 ns
t
RAC
= 70 ns
Unit
Notes
MIN.
MAX.
MIN.
MAX.
Read / Write cycle time
t
RC
104
124
ns
RAS precharge time
t
RP
40
50
ns
CAS precharge time
t
CPN
10
10
ns
RAS pulse width
t
RAS
60
10,000
70
10,000
ns
CAS pulse width
t
CAS
10
10,000
12
10,000
ns
RAS hold time
t
RSH
10
12
ns
CAS hold time
t
CSH
40
50
ns
RAS to CAS delay time
t
RCD
14
45
14
50
ns
1
RAS to column address delay time
t
RAD
12
30
12
35
ns
1
CAS to RAS precharge time
t
CRP
5
5
ns
2
Row address setup time
t
ASR
0
0
ns
Row address hold time
t
RAH
10
10
ns
Column address setup time
t
ASC
0
0
ns
Column address hold time
t
CAH
10
12
ns
OE lead time referenced to RAS
t
OES
0
0
ns
CAS to data setup time
t
CLZ
0
0
ns
OE to data setup time
t
OLZ
0
0
ns
OE to data delay time
t
OED
13
15
ns
Masked byte write hold time referenced to RAS
t
MRH
0
0
ns
Transition time (rise and fall)
t
T
1
50
1
50
ns
Refresh time
t
REF
8
8
ms
Notes 1.
For read cycles, access time is defined as follows:
Input conditions
Access time
Access time from RAS
t
RAD
t
RAD (MAX.)
and t
RCD
t
RCD (MAX.)
t
RAC (MAX.)
t
RAC (MAX.)
t
RAD
> t
RAD (MAX.)
and t
RCD
t
RCD (MAX.)
t
AA (MAX.)
t
RAD
+ t
AA (MAX.)
t
RCD
> t
RCD (MAX.)
t
CAC (MAX.)
t
RCD
+ t
CAC (MAX.)
t
RAD (MAX.)
and t
RCD (MAX.)
are specified as reference points only ; they are not restrictive operating parameters.
They are used to determine which access time (t
RAC
, t
AA
or t
CAC
) is to be used for finding out when output
data will be available. Therefore, the input conditions t
RAD
t
RAD (MAX.)
and t
RCD
t
RCD (MAX.)
will not cause
any operation problems.
2.
t
CRP (MIN.)
requirement is applied to RAS, CAS cycles.
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