參數(shù)資料
型號: μPD424210
廠商: NEC Corp.
英文描述: 16 bits CMOS Dynamic RAM with Optional EDO.(16M 同步動態(tài)RAM)
中文描述: 16位的CMOS動態(tài)隨機存儲器的任擇易都。(1,600同步動態(tài)RAM)的
文件頁數(shù): 12/48頁
文件大小: 351K
代理商: ΜPD424210
12
μ
PD424210
Read Cycle
Parameter
Symbol
t
RAC
= 60 ns
t
RAC
= 70 ns
Unit
Notes
MIN.
MAX.
MIN.
MAX
Access time from RAS
t
RAC
60
70
ns
1
Access time from CAS
t
CAC
15
20
ns
1
Access time from column address
t
AA
30
35
ns
1
Access time from OE
t
OEA
15
20
ns
Column address lead time referenced to RAS
t
RAL
30
35
ns
Read command setup time
t
RCS
0
0
ns
Read command hold time referenced to RAS
t
RRH
0
0
ns
2
Read command hold time referenced to CAS
t
RCH
0
0
ns
2
Output buffer turn-off delay time from OE
t
OEZ
0
15
0
15
ns
3
CAS hold time to OE
t
CHO
5
5
ns
Notes 1.
For read cycles, access time is defined as follows:
Input conditions
Access time
Access time from RAS
t
RAD
t
RAD (MAX.)
and t
RCD
t
RCD (MAX.)
t
RAC (MAX.)
t
RAC (MAX.)
t
RAD
> t
RAD (MAX.)
and t
RCD
t
RCD (MAX.)
t
AA (MAX.)
t
RAD
+ t
AA (MAX.)
t
RCD
> t
RCD (MAX.)
t
CAC (MAX.)
t
RCD
+ t
CAC (MAX.)
t
RAD (MAX.)
and t
RCD (MAX.)
are specified as reference points only; they are not restrictive operating parameters.
They are used to determine which access time (t
RAC
, t
AA
or t
CAC
) is to be used for finding out when output
data will be available. Therefore, the input conditions t
RAD
t
RAD (MAX.)
and t
RCD
t
RCD (MAX.)
will not cause
any operation problems.
2.
Either t
RCH (MIN.)
or t
RRH (MIN.)
should be met in read cycles.
3.
t
OEZ(MAX.)
defines the time when the output achieves the condition of Hi-Z and is not referenced to V
OH
or
V
OL
.
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