參數(shù)資料
型號(hào)： μPD424210
廠商： NEC Corp.
英文描述： 16 bits CMOS Dynamic RAM with Optional EDO.(16M 同步動(dòng)態(tài)RAM)
中文描述： 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的任擇易都。（1,600同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 44/48頁(yè)
文件大?。?/td> 351K
代理商： ΜPD424210
44
μ
PD424210
Recommended Soldering Conditions
The following conditions (see tables below and next page) must be met for soldering conditions of the
μ
PD424210.
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Please consult with our sales offices in case other soldering process is used, or in case the soldering is done
under different conditions.
Types of Surface Mount Device
μ
PD424210G5-7JF: 44-pin plastic TSOP (II) (300 mil)
Soldering process
Soldering conditions
Infrared ray reflow
Peak temperature of package surface: 235 C or lower,
Reflow time: 30 seconds or less (210 C or higher),
Number of reflow processes: MAX. 3
Exposure limit: 7 days
Note
(10 hours pre-baking is required at 125 C afterwards)
VPS
Peak temperature of package: 215 C or lower,
Reflow time: 40 seconds or less (200 C or higher),
Number of reflow processes: MAX. 3
Exposure limit: 7 days
Note
(10 hours pre-baking is required at 125 C afterwards)
Partial heating method
Terminal temperature: 300 C or lower,
Time: 3 seconds or lower (Per side of the package).
Note
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Caution
Do not apply more than one soldering method at any one time, except for “Partial heating
method”.
Symbol
IR35-107-3
VP15-107-3
————
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