參數(shù)資料
型號(hào)： W947D6HBHX5E
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 8M X 16 DDR DRAM, 5 ns, PBGA60
封裝： 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60
文件頁數(shù)： 38/60頁
文件大?。?/td> 1160K
代理商： W947D6HBHX5E
W947D6HB / W947D2HB
128Mb Mobile LPDDR
Publication Release Date:Jun,17, 2011
- 43 -
Revision A01-003
7.11.3 Self Refresh Entry and Exit
PRE
NOP
ARF
NOP
ARF
NOP
Pre All
High-z
CK
Command
A10(AP)
DQ
tRP
> t RFC
tRFC
=Don't Care
Address
NOP
tXSR
Any Command
(Auto Refresh
Recommene
d
)
Exit from
Self Refresh
Mode
Enter
Self Refresh
Mode
CKE
ACT
NOP
Ba, A
Row n
7.12 Power Down
Power-down is entered when CKE is registered Low (no accesses can be in progress). If power-down occurs when
all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row
active in any bank, this mode is referred to as active power-down.
Entering power-down deactivates the input and output buffers, excluding CK, CK and CKE. In power-down mode,
CKE Low must be m
aintained, and all other input signals are “Dont Care”. The minimum power-down duration is
specified by tCKE. However, power-down duration is limited by the refresh requirements of the device.
The power-down state is synchronously exited when CKE is registered High (along with a NOP or DESELECT
command). A valid command may be applied tXP after exit from power-down.
For Clock Stop during Power-Down mode, please refer to the Clock Stop subsection in this specification.
7.12.1 Power-Down Entry and Exit
PRE
NOP
Valid
Pre All
High-z
CK
Command
A10 (AP)
DQ
tRP
tCKE
tXP
Address
NOP
Any Command
Exit from
Power Down
Entry
Valid
Precharge Power-Down mode shown; all banks are idle and tRP
is met when Power-down Entry command is issued
= Don't Care
CKE
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PDF描述
WS57C256F-70LMB 32K X 8 UVPROM, 70 ns, CQCC32
WMS128K8C-120FEIEA 128K X 8 STANDARD SRAM, 120 ns, CDFP32
WMS128K8L-100FEIE 128K X 8 STANDARD SRAM, 100 ns, CDFP32
WMS128K8L-120FECEA 128K X 8 STANDARD SRAM, 120 ns, CDFP32
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W947D6HBHX5I 制造商:WINBOND 制造商全稱:Winbond 功能描述:128Mb Mobile LPDDR
W947D6HBHX5I TR 制造商:Winbond Electronics Corp 功能描述:
W947D6HBHX6E 制造商:Winbond Electronics Corp 功能描述:IC LPDDR SDRAM 128MBIT 60VFBGA
W947D6HBHX6G 制造商:WINBOND 制造商全稱:Winbond 功能描述:128Mb Mobile LPDDR
W948D2FB 制造商:WINBOND 制造商全稱:Winbond 功能描述:256Mb Mobile LPDDR
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