參數(shù)資料
型號(hào)： W947D6HBHX5E
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 8M X 16 DDR DRAM, 5 ns, PBGA60
封裝： 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60
文件頁(yè)數(shù)： 14/60頁(yè)
文件大?。?/td> 1160K
代理商： W947D6HBHX5E
W947D6HB / W947D2HB
128Mb Mobile LPDDR
Publication Release Date:Jun,17, 2011
- 21 -
Revision A01-003
6.11.3 Truth Table - DM Operations
FUNCTION
DM
DQ
NOTES
Write Enable
L
Valid
1
Write Inhibit
H
X
1
Notes:
1.
Used to mask write data, provided coincident with the corresponding data.
6.11.4 Truth Table - CKE
CKEn-1
CKEn
CURRENT STATE
COMMANDn
ACTIONn
NOTES
L
Power Down
X
Maintain Power Down
L
Self Refresh
X
Maintain Self Refresh
L
Deep Power Down
X
Maintain Deep Power Down
L
H
Power Down
NOP or DESELECT
Exit Power Down
5, 6, 9
L
H
Self Refresh
NOP or DESELECT
Exit Self Refresh
5, 7, 10
L
H
Deep Power Down
NOP or DESELECT
Exit Deep Power Down
5, 8
H
L
All Banks Idle
NOP or DESELECT
Precharge Power Down Entry
5
H
L
Bank(s) Active
NOP or DESELECT
Active Power Down Entry
5
H
L
All Banks Idle
AUTO REFRESH
Self Refresh Entry
H
L
All Banks Idle
BURST TERMINATE
Enter Deep Power Down
H
See the other Truth Tables
Notes:
1.
CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2.
Current state is the state of LPDDR immediately prior to clock edge n.
3.
COMMANDn is the command registered at clock edge n, and ACTIONn is the result of COMMANDn.
4.
All states and sequences not shown are illegal or reserved.
5.
DESELECT and NOP are functionally interchangeable.
6.
Power Down exit time (tXP) should elapse before a command other than NOP or DESELECT is issued.
7.
SELF REFRESH exit time (tXSR) should elapse before a command other than NOP or DESELECT is issued.
8.
The Deep Power-Down exit procedure must be followed as discussed in the Deep Power-Down section of the Functional
Description.
9.
The clock must toggle at least once during the tXP period.
10.
The clock must toggle at least once during the tXSR time.
相關(guān)PDF資料
PDF描述
WS57C256F-70LMB 32K X 8 UVPROM, 70 ns, CQCC32
WMS128K8C-120FEIEA 128K X 8 STANDARD SRAM, 120 ns, CDFP32
WMS128K8L-100FEIE 128K X 8 STANDARD SRAM, 100 ns, CDFP32
WMS128K8L-120FECEA 128K X 8 STANDARD SRAM, 120 ns, CDFP32
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W947D6HBHX5I 制造商:WINBOND 制造商全稱:Winbond 功能描述:128Mb Mobile LPDDR
W947D6HBHX5I TR 制造商:Winbond Electronics Corp 功能描述:
W947D6HBHX6E 制造商:Winbond Electronics Corp 功能描述:IC LPDDR SDRAM 128MBIT 60VFBGA
W947D6HBHX6G 制造商:WINBOND 制造商全稱:Winbond 功能描述:128Mb Mobile LPDDR
W948D2FB 制造商:WINBOND 制造商全稱:Winbond 功能描述:256Mb Mobile LPDDR
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