參數(shù)資料
型號(hào)： W947D6HBHX5E
廠商： WINBOND ELECTRONICS CORP
元件分類(lèi)： DRAM
英文描述： 8M X 16 DDR DRAM, 5 ns, PBGA60
封裝： 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60
文件頁(yè)數(shù)： 35/60頁(yè)
文件大?。?/td> 1160K
代理商： W947D6HBHX5E
W947D6HB / W947D2HB
128Mb Mobile LPDDR
Publication Release Date:Jun,17, 2011
- 40 -
Revision A01-003
7.7.1 Precharge Command
= Don't Care
(High)
CK
CKE
CS
RAS
CAS
WE
Address
BA=BANK Address
(if A10 = L,otherwise Don't Care)
BA
BA0,BA1
A10
All Banks
One Bank
7.8 Auto Precharge
Auto Precharge is a feature which performs the same individual bank precharge function as described above, but
without requiring an explicit command. This is accomplished by using A10 (A10 = High), to enable Auto Precharge in
conjunction with a specific READ or WRITE command. A precharge of the bank / row that is addressed with the
READ or WRITE command is automatically performed upon completion of the read or write burst. Auto Precharge is
non persistent in that it is either enabled or disabled for each individual READ or WRITE command.
Auto Precharge ensures that a precharge is initiated at the earliest valid stage within a burst. The user must not
issue another command to the same bank until the precharing time (tRP) is completed. This is determined as if an
explicit PRECHARGE command was issued at the earliest possible time, as described for each burst type in the
Operation section of this specification.
7.9 Refresh Requirements
LPDDR SDRAM devices require a refresh of all rows in any rolling 64ms interval. Each refresh is generated in one of
two ways: by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode.
Dividing the number of device rows into the rolling 64ms interval defines the average refresh interval (tREFI), which is
a guideline to controllers for distributed refresh timing.
7.10 Auto Refresh
AUTO REFRESH command is used during normal operation of the LPDDR SDRAM. This command is non
persistent, so it must be issued each time a refresh is required.
The refresh addressing is generated by the internal refresh controller. The LPDDR SDRAM requires AUTO
REFRESH commands at an average periodic interval of tREFI.
相關(guān)PDF資料
PDF描述
WS57C256F-70LMB 32K X 8 UVPROM, 70 ns, CQCC32
WMS128K8C-120FEIEA 128K X 8 STANDARD SRAM, 120 ns, CDFP32
WMS128K8L-100FEIE 128K X 8 STANDARD SRAM, 100 ns, CDFP32
WMS128K8L-120FECEA 128K X 8 STANDARD SRAM, 120 ns, CDFP32
WMS128K8L-120DRIEA 128K X 8 STANDARD SRAM, 120 ns, CDSO32
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W947D6HBHX5I 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:128Mb Mobile LPDDR
W947D6HBHX5I TR 制造商:Winbond Electronics Corp 功能描述:
W947D6HBHX6E 制造商:Winbond Electronics Corp 功能描述:IC LPDDR SDRAM 128MBIT 60VFBGA
W947D6HBHX6G 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:128Mb Mobile LPDDR
W948D2FB 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:256Mb Mobile LPDDR
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