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參數(shù)資料
| 型號： | W25Q80BVSSIG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 8M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.208 INCH, GREEN, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 41/75頁 |
| 文件大?。?/td> | 1055K |
| 代理商： | W25Q80BVSSIG |
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W25Q80BV
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9.2.28 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction
“7Ah” will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY
bit equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set
from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will
complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume
instruction “7Ah” will be ignored by the device. The Erase/Program Resume instruction sequence is
shown in figure 26.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “tSUS” following a previous Resume instruction.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (7Ah)
Mode 0
Mode 3
Resume previously
suspended Program or
Erase
Figure 26. Erase/Program Resume Instruction Sequence
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q80BVSSIG TR | 制造商:Winbond Electronics Corp 功能描述:SPIFLASH, 8M-BIT, 4KB UNIFORM 制造商:Winbond Electronics Corp 功能描述:IC FLASH 8MBIT 104MHZ 8SOIC |
| W25Q80BVSSIG/REELS | 制造商:Winbond Electronics Corp 功能描述: |
| W25Q80BVSSIG-T | 制造商:Winbond Electronics 功能描述:8MB SPI FLASH |
| W25Q80BVSSIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q80BVZPAG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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