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參數(shù)資料
| 型號(hào)： | W25Q64CVZPAP |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 6 X 5 MM, GREEN, WSON-8 |
| 文件頁(yè)數(shù)： | 44/79頁(yè) |
| 文件大?。?/td> | 1086K |
| 代理商： | W25Q64CVZPAP |
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W25Q64CV
Publication Release Date: April 01, 2011
- 49 -
Revision C
7.2.29 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
Figure 27.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (B9h)
Mode 0
Mode 3
tDP
Power-down current
Stand-by current
Figure 27. Deep Power-down Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WMS128K8C-25CQE | 128K X 8 STANDARD SRAM, 25 ns, CDIP32 |
| WMF512K8X-150DEC5 | 512K X 8 FLASH 5V PROM, 150 ns, CDSO32 |
| WME128K8X-200DEC | 128K X 8 EEPROM 5V, 200 ns, CDSO32 |
| WMF512K8X-70FEM5 | 512K X 8 FLASH 5V PROM, 70 ns, CDFP32 |
| WMF512K8X-90CM5 | 512K X 8 FLASH 5V PROM, 90 ns, CDIP32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q64CVZPIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64CVZPIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64DW | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI |
| W25Q64DWSFIG | 功能描述:IC FLASH SPI 64MBIT 16SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
| W25Q64DWSFIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI |
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