參數(shù)資料
型號(hào)： W25B20-VSNIG
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 2M X 1 FLASH 2.7V PROM, PDSO8
封裝： 0.150 INCH, GREEN, PLASTIC, SOIC-8
文件頁(yè)數(shù)： 4/36頁(yè)
文件大?。?/td> 1424K
代理商： W25B20-VSNIG
W25B40/W25B40A
- 12 -
8.1.6
Write Protection Operation - Bottom Boot Sector Organization
STATUS REGISTER
W25B40 / W25B40A (4M-BIT) MEMORY PROTECTION
BP2
BP1
BP0
SECTOR(S)
ADDRESSES
DENSITY (KB)
PORTION
1
ALL
000000h - 07FFFFh
512KB
ALL
1
0
0 thru 7
000000h - 03FFFFh
256KB
Lower 1/2
1
0
1
0 thru 4
000000h - 00FFFFh
64KB
Lower 1/8
1
0
0 thru 3
000000h - 007FFFh
32KB
Lower 1/16
0
1
0 thru 2
000000h - 003FFFh
16KB
Lower 1/32
0
1
0
0 thru 1
000000h - 001FFFh
8KB
Lower 1/64
0
1
0
000000h - 000FFFh
4KB
Lower 1/128
0
NONE
8.1.7
Write Protection Operation - Top Boot Sector Organization (Special Order)
STATUS REGISTER
W25B40 / W25B40A (4M-BIT) MEMORY PROTECTION
BP2
BP1
BP0
SECTOR(S)
ADDRESSES
DENSITY (KB)
PORTION
0
NONE
0
1
11
07F000h - 07FFFFh
4KB
Upper 1/128
0
1
0
10 thru 11
07E000h - 07FFFFh
8KB
Upper 1/64
0
1
9 thru 11
07C000h - 07FFFFh
16KB
Upper 1/32
1
0
8 thru 11
078000h - 07FFFFh
32KB
Upper 1/16
1
0
1
7 thru 11
070000h - 07FFFFh
64KB
Upper 1/8
1
0
4 thru 11
040000h - 07FFFFh
256KB
Upper 1/2
1
ALL
000000h - 07FFFFh
512KB
ALL
8.2 INSTRUCTIONS
The instruction set of the W25B40 / W25B40A consists of twelve basic instructions that are fully
controlled through the SPI bus (see Instruction Set table). Instructions are initiated with the falling
edge of Chip Select (/CS). The first byte of data clocked into the DI input provides the instruction code.
Data on the DI input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes,
data bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed
with the rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in
figures 4 through 17. All read instructions can be completed after any clocked bit. However, all
instructions that Write, Program or Erase must complete on a byte boundary (/CS) driven high after a
full 8-bits have been clocked) otherwise the instruction will be terminated. This feature further protects
the device from inadvertent writes. Additionally, while the memory is being programmed or erased, or
when the Status Register is being written, all instructions except for Read Status Register will be
ignored until the program or erase cycle has completed.
相關(guān)PDF資料
PDF描述
W25P80-VSFI-G 8M X 1 FLASH 2.7V PROM, PDSO16
W25Q16VSFIG 2M X 8 SPI BUS SERIAL EEPROM, PDSO16
W25Q32DWZPIP 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8
W25Q80VZPIG 1M X 8 SPI BUS SERIAL EEPROM, DSO8
W25X16AVDAIZ 2M X 8 FLASH 2.7V PROM, PDIP8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25B40 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M-BIT SERIAL FLASH MEMORY WITH BOOT AND PARAMETER SECTORS
W25B40A 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M-BIT SERIAL FLASH MEMORY WITH BOOT AND PARAMETER SECTORS
W25B40AVSNIG 功能描述:IC FLASH 4MBIT 40MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
W25B40AVSNIG T&R 功能描述:IC FLASH 4MBIT 40MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
W25B40VSNIG 功能描述:IC FLASH 4MBIT 40MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
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