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參數(shù)資料
| 型號： | V58C2256324SAH-36 |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 8M X 32 DDR DRAM, 0.55 ns, PBGA144 |
| 封裝： | ROHS COMPLIANT, BGA-144 |
| 文件頁數(shù)： | 25/37頁 |
| 文件大?。?/td> | 370K |
| 代理商： | V58C2256324SAH-36 |
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V58C2256324SA Rev. 1.4 August 2007
ProMOS TECHNOLOGIES
V58C2256324SA
DC Characteristics
Recommended operating conditions Unless Otherwise Noted, TA=0 to 70°C
Parameter
Symbol
Test Condition
Version
Unit Note
-28
-33
-36
-4A
-4
-5
Operating Current
(One Bank Active)
ICC1
Burst Lenth = 2 tRC >= tRC(min)
IOL= 0mA, tCK = tCK(min)
450
430
410
380
350
mA
1
Precharge Standby Current in
Power-down mode
ICC2P
CKE <= VIL(max), tCK = tCK(min) 80
75
70
65
60
mA
Precharge Standby Current in Non
Power-down mode
ICC2N
CKE >=VIH(min), CS
>=VIH(min),
tCK = tCK(min)
125
120
115
110
105
mA
Active Standby Current power-down
mode
ICC3P
CKE <= VIL(max), tCK = tCK(min) 130
120
110
100
90
mA
Active Standby Current in in Non
Power-down mode
ICC3N
CKE >= VIH(min), CS >=
VIH(min),
tCK = tCK(min)
330
310
280
240
200
mA
Operating Current
(Burst Mode)
ICC4
IOL = 0mA, tCK= tCK(min),
Page Burst, All Banks activat-
ed
760
740
690
640
600
mA
1
Auto Refresh Current
ICC5
tRC >= tRFC(min)
330
300
290
280
270
mA
2
Self Refresh Current
ICC6
CKE =< 0.2V (Normal)
2
mA
(Low-Power)
1.8
mA
.
Absolute Maximum Ratings
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.6
W
Short circuit current
IOS
50
mA
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