參數(shù)資料
型號： TMS44409P
廠商： Texas Instruments, Inc.
英文描述： 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY
中文描述： 1048576字4位動態(tài)隨機(jī)存取存儲器
文件頁數(shù)： 9/26頁
文件大?。?/td> 413K
代理商： TMS44409P
TMS44409, TMS44409P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMHS563 – JULY1995
9
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
timing requirements over recommended ranges of supply voltage and operating free-air
temperature (continued)
’44409-60
’44409P-60
’44409-70
’44409P-70
’44409-80
’44409P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tRSH
tRWD
Delay time, CAS low to RAS high
10
12
15
ns
Delay time, RAS low to W low
85
98
110
ns
tREF
Refresh time interval
’44409
16
16
16
ms
’44409P
128
128
128
ms
tT
tWTH
tCHS
tWTS
tCPS
tRPS
tRASS
Transition time
2
50
2
50
2
50
ms
Hold time, write low (test mode)
10
10
10
ns
Hold time, CAS low after RAS high (self refresh) (TMS44409P only)
– 50
– 50
– 50
ns
Setup time, write low (test mode)
10
10
10
ns
CAS precharge before self refresh
0
0
0
ns
RAS precharge after self refresh
110
130
150
ns
μ
s
Self-refresh entry from RAS low (TMS44409P only)
100
100
100
A
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