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| 型號(hào)： | TMS44409P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY |
| 中文描述： | 1048576字4位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 6/26頁(yè) |
| 文件大?。?/td> | 413K |
| 代理商： | TMS44409P |
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TMS44409, TMS44409P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMHS563 – JULY1995
6
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
’44409-60
’44409P-60
’44409-70
’44409P-70
’44409-80
’44409P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
VOH
High-level output
voltage
IOH = – 5 mA
2.4
2.4
2.4
V
VOL
Low-level output
voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current
(leakage)
VCC = 5.5 V,
All other pins = 0 V to VCC
VCC = 5.5 V,
CAS high
VI = 0 V to 6.5 V,
±
10
±
10
±
10
mA
IO
Output current
(leakage)
VO = 0 V to 6.5 V,
±
10
±
10
±
10
μ
A
ICC1
Read- or write-cycle
current (see Note 3)
VCC = 5.5 V,
tRWC = MIN
105
90
80
mA
After 1 memory cycle,
RAS and CAS high,
VIH = 2.4 V
TTL
2
2
2
mA
ICC2
Standby current
CMOS
’44409
1
1
1
mA
μ
A
’44409P
500
500
500
ICC3
Average refresh
current
(RAS only or CBR)
(see Note 3)
VCC = 5.5 V,
RAS cycling,
RAS low after CAS low (CBR)
tRWC = MIN,
CAS high (RAS only);
105
90
80
mA
ICC4
Average EDO page
current (see Note 4)
VCC = 5.5 V,
RAS low,
tHPC = MIN,
CAS cycling
90
80
70
mA
ICC6
Self-refresh current
CAS, RAS
Measured after tRASS min
RAS = VIH,
Data out = enabled
2 V,
500
500
500
μ
A
ICC7
Standby current
CAS = VIL,
5
5
5
mA
ICC10
Battery-backup
current
tRC = 125
μ
s,
VCC – 0.2 V
≤
VIH
≤
6.5 V,
0 V
≤
VIL
≤
0.2 V, W and OE = VIH,
Addresses and data stable
tRAS
≤
1
μ
s,
500
500
500
μ
A
Measured with outputs open
TMS44409P only
NOTES:
3. Measured with a maximum of one address change while RAS = VIL
4. Measured with a maximum of one address change while CAS = VIH
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 5)
§
PARAMETER
MIN
MAX
UNIT
Ci(A)
Ci(OE)
Ci(RC)
Ci(W)
Co
§Capacitance measurements are made on a sample basis only.
NOTE 5: VCC = 5 V
±
0.5 V, and the bias on pins under test is 0 V.
Input capacitance, A0–A9
5
pF
Input capacitance, OE
7
pF
Input capacitance, CAS and RAS
7
pF
Input capacitance, W
7
pF
Output capacitance
7
pF
A
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