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參數(shù)資料
| 型號(hào)： | TMS44409P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY |
| 中文描述： | 1048576字4位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 7/26頁(yè) |
| 文件大?。?/td> | 413K |
| 代理商： | TMS44409P |
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TMS44409, TMS44409P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMHS563 – JULY1995
7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature (see Figure 1)
PARAMETER
’44409-60
’44409P-60
’44409-70
’44409P-70
’44409-80
’44409P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tAA
tCAC
tCPA
tRAC
tOEA
tCLZ
tREZ
tCEZ
tOEZ
tWEZ
NOTE 6: Maximum tREZ, tCEZ, tWEZ and tOEZ are specified when the output is no longer driven.
Access time from column address
30
35
40
ns
Access time from CAS low
15
18
20
ns
Access time from column precharge
35
40
45
ns
Access time from RAS low
60
70
80
ns
Access time from OE low
15
18
20
ns
CAS to output in low-impedance state
0
0
0
ns
Output disable time, start of RAS high (see Note 6)
3
15
3
18
3
20
ns
Output disable time, start of CAS high (see Note 6)
3
15
3
18
3
20
ns
Output disable time after OE high (see Note 6)
3
15
3
18
3
20
ns
Output disable time after W high (see Note 6)
3
15
3
18
3
20
ns
EDO timing requirements over recommended ranges of supply voltage and operating free-air
temperature
’44409-60
’44409P-60
’44409-70
’44409P-70
’44409-80
’44409P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tHPC
tCSH
tCHO
tDOH
tCAS
tWPE
tOCH
tCP
tOEP
Cycle time, EDO page-mode read or write
25
30
35
ns
Hold time, CAS from RAS
50
55
60
ns
Hold time, OE from CAS
10
10
10
ns
Hold time, output from CAS
3
3
3
ns
Pulse duration, CAS
10
10000
12
10000
15
10000
ns
Pulse duration, W (output disable only)
5
5
5
ns
Setup time, OE before CAS
10
10
10
ns
Precharge time, CAS
5
5
5
ns
Precharge time, OE
5
5
5
ns
A
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