參數(shù)資料
型號(hào)： TMS44409P
廠商： Texas Instruments, Inc.
英文描述： 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY
中文描述： 1048576字4位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器
文件頁(yè)數(shù)： 18/26頁(yè)
文件大?。?/td> 413K
代理商： TMS44409P
TMS44409, TMS44409P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMHS563 – JULY1995
18
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
RAS
CAS
A0–A9
W
OE
DQ1–DQ4
Row
Column 1
Don’t Care
Valid
In 2
Column 2
tRASP
Valid
In 1
tRP
tCSH
tPRWC
tRCD
tCP
tCRP
tRSH
tASC
tCAH
tRAD
tASR
tCWD
tAWD
tRWD
tRAH
tCWL
tRWL
tWP
tCPA
tOEH
tDH
tDS
tAA
tRCS
tRAC
tCAC
tCLZ
tOEA
tOEZ
tOEH
tOED
tCAS
Valid Out 2
See Note A
Valid
Out 1
tCAL
tRAL
NOTES: A. Output can go from the high-impedance state to an invalid-data state prior to the specified access time.
B. A read or write cycle can be intermixed with read-write cycles as long as the read- and write-timing specifications are not violated.
Figure 10. EDO Read-Write-Cycle Timing
A
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