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參數(shù)資料
| 型號： | TE28F640P30B85 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56 |
| 封裝： | 14 X 20 MM, TSOP-56 |
| 文件頁數(shù)： | 76/102頁 |
| 文件大?。?/td> | 1609K |
| 代理商： | TE28F640P30B85 |
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1-Gbit P30 Family
April 2005
76
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
Note:
Always clear the Status Register prior to resuming erase operations. It avoids Status Register
ambiguity when issuing commands during Erase Suspend. If a command sequence error occurs
during an erase-suspend state, the Status Register contains the command sequence error status
(SR[7,5,4] set). When the erase operation resumes and finishes, possible errors during the erase
operation cannot be detected via the Status Register because it contains the previous error status.
14.1.1
Clear Status Register
The Clear Status Register command clears the status register. It functions independent of V
PP
. The
Write State Machine (WSM) sets and clears SR[7,6,2], but it sets bits SR[5:3,1] without clearing
them. The Status Register should be cleared before starting a command sequence to avoid any
ambiguity. A device reset also clears the Status Register.
14.2
Read Device Identifier
The Read Device Identifier command instructs the device to output manufacturer code, device
identifier code, block-lock status, protection register data, or configuration register data (see
Section 9.2, “Device Commands” on page 50
for details on issuing the Read Device Identifier
command).
Table 29, “Device Identifier Information” on page 77
and
Table 30, “Device ID codes”
on page 77
show the address offsets and data values for this device.
5
Erase Status (ES)
0 = Erase successful.
1 = Erase fail or program sequence error when set with SR[4,7].
4
Program Status (PS)
0 = Program successful.
1 = Program fail or program sequence error when set with SR[5,7]
3
V
PP
Status (VPPS)
0 = VPP within acceptable limits during program or erase operation.
1 = VPP < VPPLK during program or erase operation.
2
Program Suspend Status
(PSS)
0 = Program suspend not in effect.
1 = Program suspend in effect.
1
Block-Locked Status
(BLS)
0 = Block not locked during program or erase.
1 = Block locked during program or erase; operation aborted.
0
BEFP Status (BWS)
DWS
0
0
1
1
BWS
0
1
0
1
= WSM is busy and buffer is available for loading.
= WSM is busy and buffer is not available for loading.
= WSM is not busy and buffer is available for loading.
= Reserved for Future Use (RFU).
Table 28.
Status Register Description (Sheet 2 of 2)
Status Register (SR)
Default Value = 0x80
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F640P30B85A | 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| TE28F640P30T85 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| TE28F640P30T85A | 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
| TE28F640P33B85A | 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| TE28F640P33T85A | 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
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