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| 型號： | TE28F640P30B85 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56 |
| 封裝： | 14 X 20 MM, TSOP-56 |
| 文件頁數(shù)： | 51/102頁 |
| 文件大?。?/td> | 1609K |
| 代理商： | TE28F640P30B85 |
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1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
51
9.3
Command Definitions
Valid device command codes and descriptions are shown in
Table 21
.
Protection
Program Protection Register
2
Write
PRA
0xC0
Write
PRA
PD
Program Lock Register
2
Write
LRA
0xC0
Write
LRA
LRD
Configuration
Program Read Configuration
Register
2
Write
RCD
0x60
Write
RCD
0x03
Notes:
1.
First command cycle address should be the same as the operation’s target address.
DBA = Device Base Address (NOTE: needed for 2 or more die stacks)
IA = Identification code address offset.
QA = CFI Query address offset.
WA = Word address of memory location to be written.
BA = Address within the block.
PRA = Protection Register address.
LRA = Lock Register address.
RCD = Read Configuration Register data on A[15:0].
ID = Identifier data.
QD = Query data on DQ[15:0].
SRD = Status Register data.
WD = Word data.
N = Word count of data to be loaded into the write buffer.
PD = Protection Register data.
LRD = Lock Register data.
The second cycle of the Buffered Program Command is the word count of the data to be loaded into the write buffer. This
is followed by up to 32 words of data.Then the confirm command (0xD0) is issued, triggering the array programming
operation.
The confirm command (0xD0) is followed by the buffer data.
2.
3.
4.
Table 20.
Command Bus Cycles (Sheet 2 of 2)
Mode
Command
Bus
Cycles
First Bus Cycle
Second Bus Cycle
Oper
Addr
(1)
Data
(2)
Oper
Addr
(1)
Data
(2)
Table 21.
Command Codes and Definitions (Sheet 1 of 2)
Mode
Code
0xFF
Device Mode
Read Array
Description
Read
Places the device in Read Array mode. Array data is output on DQ[15:0].
Places the device in Read Status Register mode. The device enters this mode
after a program or erase command is issued. Status Register data is output on
DQ[7:0].
Places device in Read Device Identifier mode. Subsequent reads output
manufacturer/device codes, Configuration Register data, Block Lock status, or
Protection Register data on DQ[15:0].
Places the device in Read Query mode. Subsequent reads output Common
Flash Interface information on DQ[7:0].
Clear Status Registercommand is used to clear the SR error bits.
First cycle of a 2-cycle programming command; prepares the CUI for a write
operation. On the next write cycle, the address and data are latched and the
WSM executes the programming algorithm at the addressed location. During
program operations, the device responds only to Read Status Register and
Program Suspend commands. CE# or OE# must be toggled to update the
Status Register in asynchronous read. CE# or ADV# must be toggled to update
the Status Register Data for synchronous Non-array reads. The Read Array
command must be issued to read array data after programming has finished.
0x70
Read Status Register
0x90
Read Device ID
or Configuration
Register
0x98
Read Query
0x50
Write
0x40
Word Program Setup
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| TE28F640P30B85A | 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| TE28F640P30T85 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| TE28F640P30T85A | 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
| TE28F640P33B85A | 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| TE28F640P33T85A | 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
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