參數(shù)資料
型號(hào)： ST62T45B
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
中文描述： 該CAT24FC02是一個(gè)2 KB的EEPROM的國(guó)內(nèi)256個(gè)8位每字舉辦的串行CMOS
文件頁(yè)數(shù)： 58/72頁(yè)
文件大小： 514K
代理商： ST62T45B
58/72
ST62T45B/E45B
6 ELECTRICAL CHARACTERISTICS
6.1 ABSOLUTE MAXIMUM RATINGS
This product contains devices to protect the inputs
against damage due to high static voltages, how-
ever it is advisable to take normal precaution to
avoid application of any voltage higher than the
specified maximum rated voltages.
For proper operation it is recommended that V
I
and V
O
be higher than V
SS
and lower than V
DD
.
Reliability is enhanced if unused inputs are con-
nected to an appropriate logic voltage level (V
DD
or V
SS
).
Power Considerations
.The average chip-junc-
tion temperature, Tj, in Celsius can be obtained
from:
Tj=
TA + PD x RthJA
Where:TA =
Ambient Temperature.
RthJA =Package thermal resistance
(junction-to ambient).
PD =
Pint + Pport.
Pint =
IDD x VDD (chip internal power).
Pport = Port power dissipation(deter-
mined by the user).
Notes:
-
Stresses above those listed as ”absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
- (1) Within these limits, clamping diodes are guarantee tobe not conductive. Voltages outside these limits are authorised as long as injection
current is kept withinthe specification.
Symbol
V
DD
V
I
V
O
I
O
IV
DD
IV
SS
Tj
T
STG
Parameter
Value
-0.3 to 7.0
Unit
V
V
V
mA
mA
mA
°
C
°
C
Supply Voltage
Input Voltage
Output Voltage
Current Drain per Pin Excluding V
DD
, V
SS
Total Current into V
DD
(source)
Total Current out of V
SS
(sink)
Junction Temperature
Storage Temperature
V
SS
- 0.3 to V
DD
+ 0.3
(1)
V
SS
- 0.3 to V
DD
+ 0.3
(1)
±
10
50
50
150
-60 to 150
57
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