參數(shù)資料
型號: S71JL064H80BAI020
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 11.60 X 8 MM, FBGA-73
文件頁數(shù): 64/95頁
文件大小: 2244K
代理商: S71JL064H80BAI020
February 25, 2004 S71JLxxxHxx_00A1
S29JL064H
67
Pre l i m i n a r y
an address within any of the sectors selected for erasure to read valid status in-
formation on DQ7.
After an erase command sequence is written, if all sectors selected for erasing
are protected, Data# Polling on DQ7 is active for approximately 100 s, then the
bank returns to the read mode. If not all selected sectors are protected, the Em-
bedded Erase algorithm erases the unprotected sectors, and ignores the selected
sectors that are protected. However, if the system reads DQ7 at an address within
a protected sector, the status may not be valid.
When the system detects DQ7 has changed from the complement to true data,
it can read valid data at DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the fol-
lowing read cycles. Just prior to the completion of an Embedded Program or Erase
operation, DQ7 may change asynchronously with DQ15–DQ8 (DQ7–DQ0 for x8-
only device) while Output Enable (OE#) is asserted low. That is, the device may
change from providing status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read the status or valid data.
Even if the device has completed the program or erase operation and DQ7 has
valid data, the data outputs on DQ15–DQ0 may be still invalid. Valid data on
DQ15–DQ0 (or DQ7–DQ0 for x8-only device) will appear on successive read
cycles.
Table 12 shows the outputs for Data# Polling on DQ7. 6 shows the Data# Polling
algorithm. 22 in the "AC Characteristics" section shows the Data# Polling timing
diagram.
相關(guān)PDF資料
PDF描述
S71WS512NC0BAWEK2 Stacked Multi-Chip Product (MCP)
S71WS512NC0BAWEK3 Stacked Multi-Chip Product (MCP)
S71WS512NC0BAWEN0 Stacked Multi-Chip Product (MCP)
S71WS512NC0BAWEN2 Stacked Multi-Chip Product (MCP)
S71WS512NC0BAWEN3 Stacked Multi-Chip Product (MCP)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S71KL512SC0BHV000 功能描述:IC 512MB FLASH 64MB DRAM 24FBGA 制造商:cypress semiconductor corp 系列:HyperFlash? + HyperRAM? KL 包裝:托盤 零件狀態(tài):在售 格式 - 存儲器:多芯(FLASH/RAM) 存儲器類型:FLASH + DRAM 存儲容量:512Mbit Flash, 64Mbit RAM 速度:100MHz 接口:并聯(lián),串行 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 105°C(TA) 封裝/外殼:24-VBGA 供應(yīng)商器件封裝:24-FBGA(6x8) 標(biāo)準包裝:338
S71NS032J80 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP)
S71NS032J80BJWRA 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP)
S71NS032JA0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP)
S71NS032JA0BJWRT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP)