參數(shù)資料
型號(hào)： S29PL127J70BFI000
廠商： SPANSION LLC
元件分類： PROM
英文描述： 8M X 16 FLASH 3V PROM, 70 ns, PBGA80
封裝： 11 X 8 MM, LEAD FREE, FBGA-80
文件頁(yè)數(shù)： 2/97頁(yè)
文件大?。?/td> 3042K
代理商： S29PL127J70BFI000
10
S29PL-J
S29PL-J_00_A10 September 7, 2007
Data
Sheet
(Adv an ce
Inf o r m a t io n)
1.2
Standard Flash Memory Features
The device requires a single 3.0 volt power supply (2.7 V to 3.6 V) for both read and write functions.
Internally generated and regulated voltages are provided for the program and erase operations.
The device is entirely command set compatible with the JEDEC 42.4 single-power-supply Flash standard.
Commands are written to the command register using standard microprocessor write timing. Register
contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading
data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. The Unlock Bypass mode
facilitates faster programming times by requiring only two write cycles to program data instead of four. Device
erasure occurs by executing the erase command sequence.
The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is
ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase operations
in any combination of sectors of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is not selected for erasure. True background erase can
thus be achieved. If a read is needed from the Secured Silicon Sector area (One Time Program area) after an
erase suspend, then the user must use the proper command sequence to enter and exit this region.
The Program Suspend/Program Resume feature enables the user to hold the program operation to read
data from any sector that is not selected for programming. If a read is needed from the Secured Silicon Sector
area, Persistent Protection area, Dynamic Protection area, or the CFI area, after a program suspend, then the
user must use the proper command sequence to enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode. The system can also place the device into the standby
mode. Power consumption is greatly reduced in both these modes.
The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data
is programmed using hot electron injection.
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