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參數(shù)資料
| 型號： | R1Q2A3609BBG-50RB |
| 元件分類： | SRAM |
| 英文描述： | 4M X 9 QDR SRAM, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, LEAD FREE, PLASTIC, LBGA-165 |
| 文件頁數(shù)： | 5/26頁 |
| 文件大?。?/td> | 341K |
| 代理商： | R1Q2A3609BBG-50RB |
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R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008
Page 13 of 24
Parameter
Symbol
Min
Max
Unit
Test conditions
Notes
Input leakage current
ILI
2
A
10
Output leakage current
ILO
5
A
11
Output high voltage
VOH (Low)
VDDQ
0.2
VDDQ
V
|IOH|
≤ 0.1 mA
8, 9
VOH
VDDQ/2
0.08
VDDQ/2 +0.08
V
Note 6
8, 9
Output low voltage
VOL (Low)
VSS
0.2
V
IOL
≤ 0.1 mA
8, 9
VOL
VDDQ/2
0.08
VDDQ/2 +0.08
V
Note 7
8, 9
Notes: 1. All inputs (except ZQ, VREF) are held at either VIH or VIL.
2. IOUT = 0 mA. VDD = VDD max, tKHKH = tKHKH min.
3. Operating supply currents are measured at 100% bus utilization.
4. All address / data inputs are static at either VIN > VIH or VIN < VIL.
5. Reference value (Condition=NOP currents are valid when entering NOP after all pending READ and WRITE
cycles are completed.)
6. Outputs are impedance-controlled. |IOH| = (VDDQ/2)/(RQ/5) for values of 175
≤ RQ ≤ 350 .
7. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175
≤ RQ ≤ 350 .
8. AC load current is higher than the shown DC values. AC I/O curves are available upon request.
9. HSTL outputs meet JEDEC HSTL Class I standards.
10. 0
≤ VIN ≤ VDDQ for all input balls (except VREF, ZQ, TCK, TMS, TDI ball).
11. 0
≤ VOUT ≤ VDDQ (except TDO ball), output disabled.
Thermal Resistance
Parameter
Symbol
Typ
Unit
Notes
Junction to Ambient
θJA
24.5
°C/W
Junction to Case
θJC
5.6
°C/W
Note: These parameters are calculated under the condition of wind velocity = 1 m/s.
Capacitance
(Ta = +25°C, f=1.0MHz, VDD = 1.8V, VDDQ = 1.5V)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Notes
Input capacitance
CIN
2
3
pF
VIN = 0 V
1, 2
Clock input capacitance
CCLK
2
3
pF
VCLK = 0 V
1, 2
Input/output capacitance (D, Q, ZQ)
CI/O
3
4.5
pF
VI/O = 0 V
1, 2
Notes: 1. These parameters are sampled and not 100% tested.
2. Except JTAG (TCK, TMS, TDI, TDO) pins.
AC Test Conditions
(Ta = 0 to +70°C, VDD = 1.8V ±0.1V)
Input waveform (Rise/fall time
≤ 0.3 ns)
1.25 V
0.25 V
0.75 V
Test points
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|---|---|
| R1Q2A3609BBG-60R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3609RBG-40RB0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3609RBG-40RS0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3609RBG-40RT0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q2A3609RBG-50RB0 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
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