參數(shù)資料
型號(hào)： R1Q2A3609BBG-50RB
元件分類(lèi)： SRAM
英文描述： 4M X 9 QDR SRAM, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, LEAD FREE, PLASTIC, LBGA-165
文件頁(yè)數(shù)： 23/26頁(yè)
文件大?。?/td> 341K
代理商： R1Q2A3609BBG-50RB
R1Q2A3636B/R1Q2A3618B/R1Q2A3609B
REJ03C0341-0003 Rev.0.03 Apr. 11, 2008
Page 6 of 24
Name
I/O type
Descriptions
Notes
VDD
Supply
Power supply: 1.8 V nominal. See DC Characteristics and Operating VDD Supply
Conditions for range.
VDDQ
Supply
Power supply: Isolated output buffer supply. Nominally 1.5 V. 1.8 V is also permissible.
See DC Characteristics and Operating Conditions for range.
VSS
Supply
Power supply: Ground.
VREF
HSTL input reference voltage: Nominally VDDQ/2, but may be adjusted to improve
system noise margin. Provides a reference voltage for the HSTL input buffers.
NC
No connect: These signals are not internally connected. These signals can be left
floating or connected to ground to improve package heat dissipation.
Notes: 1. All power supply and ground balls must be connected for proper operation of the device.
Block Diagram
(R1Q2A3636B / R1Q2A3618B / R1Q2A3609B series)
Address
Registry
and
Logic
Data
Registry
and
Logic
Memory
Array
Write
Register
Address
/R
/W
K
/K
/W
/BWx
D
(Data in)
/R
K
/K
72
/36
/18
Output
Register
72
/36
/18
Output
Select
Output
Buffer
19/20/21
36/18/9
Q
(Data out)
Write
Driver
Sense
Amp
19/20/21
K
CC, /C
or
K, /K
ZQ
2
CQ
/CQ
MUX
72
/36
/18
4/2/1
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參數(shù)描述
R1Q2A3609BBG-60R 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst
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R1Q2A3609RBG-40RS0 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst
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