
General
MFR4200 Data Sheet, Rev. 0
Freescale Semiconductor
223
A.1.7
Operating Conditions
This chapter describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE
Refer to the temperature rating of the device (C, V, M) with regards to the
ambient temperature T
A
and the junction temperature T
J
. For power
dissipation calculations refer to
Section A.1.8, “Power Dissipation and
Thermal Characteristics
”.
A.1.8
Power Dissipation and Thermal Characteristics
Power dissipation and thermal characteristics are closely related. The user must assure that the maximum
operating junction temperature is not exceeded. The average chip-junction temperature (T
J
) in
°
C can be
obtained from:
Eqn. A-1
T
J
= Junction Temperature [°C]
T
A
= Ambient Temperature [°C]
P
D
= Total Chip Power Dissipation [W]
Θ
JA
= Package Thermal Resistance [°C/W]
The total power dissipation can be calculated from:
Table A-4. Operating Conditions
Rating
Symbol
Min
Typ
Max
Unit
Oscillator and Quartz frequency
f
OSC
-
40.000
40.000
MHz
Quartz overtone
Fundamental Frequency
Quartz frequency stability at T
J
f
STB
-1500
300
1500
ppm
Voltage difference VDDX to VDDR and VDDA
D
VDDX
-0.1
0
0.1
V
Voltage difference VSSX to VSSR and VSSA
D
VSSX
-0.1
0
0.1
V
I/O, Regulator and Analog Supply
V
DD5
2.97
3.3
5.5
V
Digital Logic Supply Voltage
1
1
The device contains an internal voltage regulator to generate the logic and OSC supply out of the I/O supply.
2
Refer to
Section A.1.8, “Power Dissipation and Thermal Characteristics
” for more information about the relation between
ambient temperature T
A
and device junction temperature T
J
.
V
DD
2.25
2.5
2.75
V
Oscillator Supply Voltage
1
V
DDOSC
2.25
2.5
2.75
V
Operating Junction Temperature Range
T
J
-40
-
140
o
C
Operating Ambient Temperature Range
2
T
J
-40
27
125
o
C
TJ
TA
PD
Θ
JA
(
)
+
=