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參數(shù)資料
| 型號： | NTMD2C02R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 2 Amps, 20 Volts |
| 中文描述： | 5.2 A, 20 V, 0.043 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SOIC-8 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 117K |
| 代理商： | NTMD2C02R2 |
NTMD2C02R2
http://onsemi.com
9
I
t, TIME
Figure 11. Reverse Recovery Time (t
rr
)
di/dt = 300 A/
μ
s
Standard Cell Density
t
rr
High Cell Density
t
rr
t
b
t
a
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
C
) of 25
°
C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance –
General Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(I
DM
) nor rated voltage (V
DSS
) is exceeded, and that the
transition time (t
r
, t
f
) does not exceed 10
μ
s. In addition the
total power averaged over a complete switching cycle must
not exceed (T
J(MAX)
– T
C
)/(R
θ
JC
).
A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non–linearly with an increase of peak current in avalanche
and peak junction temperature.
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
0.1
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
V
GS
= 8 V
SINGLE PULSE
T
C
= 25
°
C
10
0.1
dc
10 ms
1
100
100
Mounted on 2
″
sq. FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided) with one die operating, 10s max.
1 ms
0.1
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
10
0.1
dc
10 ms
1
100
100
Mounted on 2
″
sq. FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided) with one die operating, 10s max.
1 ms
100
μ
s
10
μ
s
N–Channel
P–Channel
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTMD2C02R2G | 功能描述:MOSFET 20V 5.2A Complementary RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD2C02R2SG | 功能描述:MOSFET COMP20V 2A .043R TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD2P01R2 | 功能描述:MOSFET -16V 2.3A Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD2P01R2G | 功能描述:MOSFET -16V 2.3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD3N08 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 80V V(BR)DSS | SO |
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