參數(shù)資料
型號(hào)： NTMD2C02R2
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 2 Amps, 20 Volts
中文描述： 5.2 A, 20 V, 0.043 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： CASE 751-07, SOIC-8
文件頁(yè)數(shù)： 2/16頁(yè)
文件大?。?/td> 117K
代理商： NTMD2C02R2
NTMD2C02R2
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Note 3)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
μ
Adc)
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 20 Vdc)
(V
GS
= 0 Vdc, V
DS
= 12 Vdc)
Gate–Body Leakage Current
(V
GS
=
±
12 Vdc, V
DS
= 0)
V
(BR)DSS
(N)
(P)
20
20
–
–
–
–
Vdc
I
DSS
(N)
(P)
–
–
–
–
1.0
1.0
μ
Adc
I
GSS
–
–
–
100
nAdc
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
Drain–to–Source On–Resistance
(V
GS
= 4.5 Vdc, I
D
= 4.0 Adc)
(V
GS
= 4.5 Vdc, I
D
= 2.4 Adc)
Drain–to–Source On–Resistance
(V
GS
= 2.7 Vdc, I
D
= 2.0 Adc)
(V
GS
= 2.7 Vdc, I
D
= 1.2 Adc)
Forward Transconductance
(V
DS
= 2.5 Vdc, I
D
= 2.0 Adc)
(V
DS
= 2.5 Vdc, I
D
= 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
V
GS(th)
(N)
(P)
0.6
0.6
0.9
0.9
1.2
1.2
Vdc
R
DS(on)
(N)
(P)
–
0.07
0.028
–
0.043
0.1
Ohm
R
DS(on)
(N)
(P)
–
0.1
0.033
–
0.048
0.13
Ohm
g
FS
(N)
(P)
3.0
3.0
6.0
4.75
–
–
mhos
C
iss
(N)
(P)
–
–
785
540
1100
750
pF
Output Capacitance
(V
DS
= 10 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
oss
(N)
(P)
–
–
210
215
450
325
Transfer Capacitance
C
rss
(N)
(P)
–
–
75
100
180
175
SWITCHING CHARACTERISTICS
(Note 5)
Turn–On Delay Time
= 16 Vdc, I
= 4.0 Adc,
(V
DD
16 Vdc, I
D
4.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0
)
t
d(on)
(N)
(P)
–
–
11
15
18
–
ns
Rise Time
t
r
(N)
(P)
–
–
35
40
65
–
Turn–Off Delay Time
(V
DD
= 10 Vdc, I
D
= 1.2 Adc,
V
GS
= 2.7 Vdc,
R
G
= 6.0
)
t
d(off)
(N)
(P)
–
–
45
35
75
–
Fall Time
t
f
(N)
(P)
–
–
60
35
110
–
Turn–On Delay Time
= 16 Vdc, I
= 6.0 Adc,
(V
DS
16 Vdc, I
D
6.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0
)
t
d(on)
(N)
(P)
–
–
12
10
20
20
Rise Time
t
r
(N)
(P)
–
–
50
35
90
65
Turn–Off Delay Time
(V
DS
= 10 Vdc, I
D
= 2.4 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0
)
t
d(off)
(N)
(P)
–
–
45
33
75
60
Fall Time
t
f
(N)
(P)
–
–
80
29
130
55
3. Negative signs for P–Channel device omitted for clarity.
4. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperature.
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