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參數資料
| 型號： | NTMFS4744N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 53A, Single N(53A, 30V功率MOSFET) |
| 中文描述： | 30V的功率MOSFET，53A條，單個N（第53A，30V的功率MOSFET的） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 69K |
| 代理商： | NTMFS4744N |
Semiconductor Components Industries, LLC, 2006
December, 2006 Rev. 3
1
Publication Order Number:
NTMFS4744N/D
NTMFS4744N
Power MOSFET
30 V, 53 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Devices
Applications
CPU Power Delivery
DCDC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
V
DSS
V
GS
I
D
Value
30
20
11
Unit
V
V
A
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current R
JA
(Note 1)
Power Dissipation
R
JA
(Note 1)
Continuous Drain
Current R
JA
(Note 2)
Power Dissipation
R
JA
(Note 2)
Continuous Drain
Current R
JC
(Note 1)
Power Dissipation
R
JC
(Note 1)
Pulsed Drain
Current
Operating Junction and Storage Temperature
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
8.0
T
A
= 25
°
C
P
D
2.2
W
T
A
= 25
°
C
ID
7.0
A
T
A
= 85
°
C
5.0
T
A
= 25
°
C
P
D
0.88
W
T
C
= 25
°
C
I
D
53
A
T
C
= 85
°
C
38
T
C
= 25
°
C
P
D
47.2
W
t
p
=10 s
T
A
= 25
°
C
I
DM
106
A
T
J
, T
STG
55 to
+150
46
6.0
286
°
C
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 24 A
pk
, L = 1.0 mH, R
G
= 25
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I
S
A
dV/dt
EAS
V/ns
mJ
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
1
4744N = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
NChannel
D
S
G
30 V
14 m @ 4.5 V
10 m @ 10 V
R
DS(on)
MAX
53 A
I
D
MAX
V
(BR)DSS
4744N
AYWW
S
S
S
G
D
D
D
D
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4744NT1G
SO8 FL
(PbFree)
1500 Tape & Reel
NTMFS4744NT3G
5000 Tape & Reel
SO8 FL
(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTMFS4744NT1G | 功能描述:MOSFET NFET 30V 53A 10MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4744NT3G | 功能描述:MOSFET NFET 30V 53A 10MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4821N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL |
| NTMFS4821NT1G | 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4821NT3G | 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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