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參數(shù)資料
| 型號： | NAND08GR3B2AN1F |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 1G X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 29/57頁 |
| 文件大?。?/td> | 887K |
| 代理商： | NAND08GR3B2AN1F |
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NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
SOFTWARE ALGORITHMS
This section gives information on the software al-
gorithms that ST recommends to implement to
manage the Bad Blocks and extend the lifetime of
the NAND device.
NAND Flash memories are programmed and
erased by Fowler-Nordheim tunneling using a high
voltage. Exposing the device to a high voltage for
extended periods can cause the oxide layer to be
damaged. For this reason, the number of program
and erase cycles is limited (see Table 18. for val-
ue) and it is recommended to implement Garbage
Collection, a Wear-Leveling Algorithm and an Er-
ror Correction Code, to extend the number of pro-
gram and erase cycles and increase the data
retention.
To help integrate a NAND memory into an applica-
tion ST Microelectronics can provide:
■
A Demo board with NAND simulation software
for PCs
■
File System OS Native reference software,
which supports the basic commands of file
management.
Contact the nearest ST Microelectronics sales of-
fice for more details.
Bad Block Management
Devices with Bad Blocks have the same quality
level and the same AC and DC characteristics as
devices where all the blocks are valid. A Bad Block
does not affect the performance of valid blocks be-
cause it is isolated from the bit line and common
source line by a select transistor.
The devices are supplied with all the locations in-
side valid blocks erased (FFh). The Bad Block In-
formation is written prior to shipping. Any block,
where the 1st and 6th Bytes, or 1st Word, in the
spare area of the 1st page, does not contain FFh,
is a Bad Block.
The Bad Block Information must be read before
any erase is attempted as the Bad Block Informa-
tion may be erased. For the system to be able to
recognize the Bad Blocks based on the original in-
formation it is recommended to create a Bad Block
table following the flowchart shown in Figure 20.
Block Replacement
Over the lifetime of the device additional Bad
Blocks may develop. In this case the block has to
be replaced by copying the data to a valid block.
These additional Bad Blocks can be identified as
attempts to program or erase them will give errors
in the Status Register.
As the failure of a page program operation does
not affect the data in other pages in the same
block, the block can be replaced by re-program-
ming the current data and copying the rest of the
replaced block to an available valid block. The
Copy Back Program command can be used to
copy the data to a valid block.
See the “Copy Back Program” section for more de-
tails.
Refer to Table 17. for the recommended proce-
dure to follow if an error occurs during an opera-
tion.
Table 17. Block Failure
Figure 20. Bad Block Management Flowchart
Operation
Recommended Procedure
Erase
Block Replacement
Program
Block Replacement or ECC
Read
ECC
AI07588C
START
END
NO
YES
NO
Block Address =
Block 0
Data
= FFh?
Last
block?
Increment
Block Address
Update
Bad Block table
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND04GW4B2AN1E | 256M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND02GW4B2AN1T | 128M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND04GR4B2CN1F | 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND08GW3B2CZL1F | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| NAND128W3A2BV6E | 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND08GR3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GR3B4CZL6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B2AN6E | 功能描述:閃存 4 GBit 2112 Byte 1056 WP 1.8v/3v RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND08GW3B2AN6F | 功能描述:閃存 4 GB 2112B 1056 Word Pg 1.8V/3V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND08GW3B2BN6E | 制造商:Micron Technology Inc 功能描述:NAND & S.MEDIA FLASH - Trays |
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