參數(shù)資料
型號： NAND08GR3B2AN1F
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 1G X 8 FLASH 1.8V PROM, 35 ns, PDSO48
封裝： 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù)： 22/57頁
文件大小： 887K
代理商： NAND08GR3B2AN1F
29/57
NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Table 13. Status Register Bits
Note: 1. The SR6 bit and SR0 bit have a different meaning during Cache Program and Cache Read operations.
2. Only valid for Cache Program operations, for other operations it is same as SR6.
3. Only valid for Cache Program operations, for other operations it is Don’t Care.
Bit
Name
Logic Level
Definition
SR7
Write Protection
'1'
Not Protected
'0'
Protected
SR6(1)
Program/ Erase/ Read
Controller
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
Cache Ready/Busy
'1'
Cache Register ready (Cache Program only)
'0'
Cache Register busy (Cache Program only)
SR5
Program/ Erase/ Read
Controller(2)
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
SR4, SR3, SR2
Reserved
Don’t Care
SR1
Cache Program Error(3)
'1'
Page N-1 failed in Cache Program operation
'0'
Page N-1 programmed successfully
SR0(1)
Generic Error
‘1’
Error – operation failed
‘0’
No Error – operation successful
Cache Program Error
‘1’
Page N failed in Cache Program operation
‘0’
Page N programmed successfully
相關(guān)PDF資料
PDF描述
NAND04GW4B2AN1E 256M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND02GW4B2AN1T 128M X 16 FLASH 3V PROM, 35 ns, PDSO48
NAND04GR4B2CN1F 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND08GW3B2CZL1F 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND08GR3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GR3B4CZL6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B2AN6E 功能描述:閃存 4 GBit 2112 Byte 1056 WP 1.8v/3v RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND08GW3B2AN6F 功能描述:閃存 4 GB 2112B 1056 Word Pg 1.8V/3V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND08GW3B2BN6E 制造商:Micron Technology Inc 功能描述:NAND & S.MEDIA FLASH - Trays
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