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參數(shù)資料
| 型號： | MT58L512Y32D |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16Mb SYNCBURST⑩ SRAM |
| 中文描述： | ⑩的SRAM 16Mb的SYNCBURST |
| 文件頁數(shù)： | 34/34頁 |
| 文件大?。?/td> | 526K |
| 代理商： | MT58L512Y32D |
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16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
ADVANCE
REVISION HISTORY
Changed FBGA capacitance values, Rev. 7/00, ADVANCE ...............................................................................Aug/8/00
C
I
; TYP 2.5 pF from 4 pF; MAX 3.5 pF from 5 pF
C
O
; TYP 4 pF from 6 pF; MAX 5 pF from 7 pF
C
CK
; TYP 2.5 pF from 5 pF; MAX 3.5 pF from 6 pF
Removed Industrial Temperature references, Rev. 7/00, ADVANCE .............................................................. July/24/00
Added 165-pin FBGA package, Rev. 7/00, ADVANCE .................................................................................... Jun/28/00
Added FBGA part marking references
Removed 119-pin PBGA and references
Added Note: “IT available for -8.5 and -10 speed grades”
Change Pin 14 to NC from V
DD
, Rev. 4/00, ADVANCE .................................................................................. Apr/13/00
Added note: ZZ has internal pull-down
Updated Boundary Scan Order, Rev. 3/00, ADVANCE ..................................................................................... Apr/6/00
Added ADVANCE status, Rev. 1/00, ADVANCE ..............................................................................................Jan/18/00
MT58L1MY18D, Rev. 11/99, ADVANCE ........................................................................................................ Nov/11/99
Added BGA JTAG functionality
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L64L18F | 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L32F | 32K x 32， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L36F | 32K x 36， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出，流通式同步脈沖靜態(tài)RAM) |
| MT58L64L18P | 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L32L32P | 32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L512Y32DT-10 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512Y32DT-10 ES | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L512Y32DT-6 | 制造商:Cypress Semiconductor 功能描述:DS2KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512Y32PT-10 IT | 制造商:Cypress Semiconductor 功能描述:16MB 512KX32 SRAM PLASTIC IND |
| MT58L512Y32PT-6 | 制造商:Cypress Semiconductor 功能描述:512KX32 SRAM PLASTIC TQFP 3.3V |
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