參數(shù)資料
型號: MT58L512Y32D
廠商: Micron Technology, Inc.
英文描述: 16Mb SYNCBURST⑩ SRAM
中文描述: ⑩的SRAM 16Mb的SYNCBURST
文件頁數(shù): 27/34頁
文件大小: 526K
代理商: MT58L512Y32D
27
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
16Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
ADVANCE
TAP AC TEST CONDITIONS
Input pulse levels....................................... V
SS
to 2.5V
Input rise and fall times .........................................1ns
Input timing reference levels............................. 1.25V
Output reference levels ..................................... 1.25V
Test load termination supply voltage ............... 1.25V
TDO
1.25V
20pF
Z = 50
50
Figure 7
TAP AC Output Load Equivalent
TAP DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(+20oC
T
J
+110oC; +2.4V
V
DD
+2.6V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
CONDITIONS
SYMBOL
V
IH
V
IL
IL
I
IL
O
MIN
1.7
-0.3
-5.0
-5.0
MAX
V
DD
+ 0.3
0.7
5.0
5.0
UNITS
V
V
μA
μA
NOTES
1, 2
1, 2
0V
V
IN
V
DD
Output(s) disabled,
0V
V
IN
V
DD
Q (DQx)
I
OLC
= 100μA
I
OLT
= 2mA
I
OHC
= -100μA
I
OHT
= -2mA
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
V
OL
1
V
OL
2
V
OH
1
V
OH
2
0.2
0.7
V
V
V
V
1
1
1
1
2.1
1.7
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
Undershoot:
Power-up:
During normal operation, V
DD
Q must not exceed V
DD
. Control input signals (such as LD#, R/W#, etc.) may not have
pulse widths less than
t
KHKL (MIN) or operate at frequencies exceeding
f
KF (MAX).
V
IH
(AC)
V
DD
+ 1.5V for t
t
KHKH/2
V
IL
(AC)
3
-0.5V for t
t
KHKH/2
V
IH
+2.6V and V
DD
2.4V and V
DD
Q
1.4V for t
200ms
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