參數(shù)資料
型號： MT28F320A18
廠商： Micron Technology, Inc.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 19/37頁
文件大?。?/td> 558K
代理商： MT28F320A18
2 MEG x 16
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
PRELIMINARY
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_3.fm - Rev. 3, Pub. 9/2002
2002, Micron Technology Inc.
19
Table 8:
Status Register Bit Definition
WSMS
7
ESS
6
ES
5
PS
4
V
PP
S
3
PSS
2
BLS
1
R
0
STATUS BIT
#
SR7
STATUS REGISTER BIT
DESCRIPTION
WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
ERASE SUSPEND STATUS (ESS)
1 = BLOCK ERASE Suspended
0 = BLOCK ERASE in Progress/Completed
ERASE STATUS (ES)
1 = Error in Block Erasure
0 = Successful BLOCK ERASE
PROGRAM STATUS (PS)
1 = Error in PROGRAM
0 = Successful PROGRAM
V
PP
STATUS (V
PP
S)
1 = V
PP
Low Detect, Operation Abort
0 = V
PP
= OK
Check write state machine bit first to determine word program
or block erase completion, before checking program or erase
status bits.
When ERASE SUSPEND is issued, WSM halts execution and sets
both WSMS and ESS bits to “1.” ESS bit remains set to “1” until
an ERASE RESUME command is issued.
When this bit is set to “1,” WSM has applied the maximum
number of erase pulses to the block and is still unable to verify
successful block erasure.
When this bit is set to “1,” WSM has attempted but failed to
program a word.
SR6
SR5
SR4
SR3
The V
PP
status bit does not provide continuous indication of the
V
PP
level. The WSM interrogates the V
PP
level only after the
program or erase command sequences have been entered. The
WSM informs the system if V
PP
< 0.9V. The V
PP
level is also
checked before the PROGRAM/ERASE operation is verified by
the WSM.
When PROGRAM SUSPEND is issued, WSM halts execution and
sets both WSMS and PSS bits to “1.” PSS bit remains set to “1”
until a PROGRAM RESUME command is issued.
If a PROGRAM or ERASE operation is attempted to one of the
locked blocks, this is set by the WSM. The operation specified is
aborted and the device is returned to read status mode.
SR2
PROGRAM SUSPEND STATUS (PSS)
1 = Program Suspended
0 = Program in Progress/Completed
BLOCK LOCK STATUS (BLS)
1 = PROGRAM/ERASE Attempted on a
Locked Block; Operation Aborted
0 = No operation to locked blocks
RESERVED FOR FUTURE ENHANCEMENTS
SR1
SR0
This bit is reserved for future enhancements.
相關PDF資料
PDF描述
MT2D18 1 Meg x 8 DRAM Module(5V，1M x 8 動態(tài)RAM模塊)
MT46V16M4 4 Meg x 4 x 4 banks DDR SDRAM(4 M x 4 x 4組，雙數(shù)據(jù)速率同步動態(tài)RAM)
MT46V4M16 1 Meg x 16 x 4 banks DDR SDRAM(1M x 16 x 4組，雙數(shù)據(jù)速率同步動態(tài)RAM)
MT46V8M8 2 Meg x 8 x 4 banks DDR SDRAM(2 M x 8 x 4組，雙數(shù)據(jù)速率同步動態(tài)RAM)
MT46V2M32LG DOUBLE DATA RATE DDR SDRAM
相關代理商/技術參數(shù)
參數(shù)描述
MT28F320J3 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Q-FLASHTM MEMORY
MT28F320J3BS-11 ET 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT28F320J3BS-11 ET TR 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤
MT28F320J3BS-11 GMET 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT28F320J3BS-11 GMET TR 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*