PD
參數(shù)資料
型號： MC9RS08KA1CSCR
廠商： Freescale Semiconductor
文件頁數(shù)： 15/136頁
文件大?。?/td> 0K
描述： IC MCU 8-BIT 1K FLASH 8-SOIC
產(chǎn)品培訓(xùn)模塊： Mechatronics
USBSpyder08 Discovery Kit
RS08KA2 Low-End Microcontroller Series
MC9RS08KA8 Microcontroller
標(biāo)準(zhǔn)包裝： 1
系列： RS08
核心處理器： RS08
芯體尺寸： 8-位
速度： 10MHz
外圍設(shè)備： LVD，POR，WDT
輸入/輸出數(shù)： 4
程序存儲器容量： 1KB（1K x 8）
程序存儲器類型： 閃存
RAM 容量： 63 x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 5.5 V
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
包裝： 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面： 726 (CN2011-ZH PDF)
其它名稱： MC9RS08KA1CSCRDKR
Appendix A Electrical Characteristics
MC9RS08KA2 Series Data Sheet, Rev. 4
Freescale Semiconductor
111
PD = K ÷ (TJ + 273°C)
Eqn. A-2
Solving Equation A-1 and Equation A-2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)
2
Eqn. A-3
where K is a constant pertaining to the particular part. K can be determined from Equation A-3 by
measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be
obtained by solving equations 1 and 2 iteratively for any value of TA.
A.4
Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete dc parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
A.5
DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table A-3. ESD Protection Characteristics
Parameter
Symbol
Value
Unit
ESD Target for Machine Model (MM)
MM circuit description
VTHMM
200
V
ESD Target for Human Body Model (HBM)
HBM circuit description
VTHHBM
2000
V
Table A-4. DC Characteristics
(Temperature Range = –40 to 85
°C Ambient)
Parameter
Symbol
Min
Typical
Max
Unit
Supply voltage (run, wait and stop modes.)
0 < fBus <10MHz
VDD
1.8
—
5.5
V
Minimum RAM retention supply voltage applied to VDD
VRAM
0.8 1
——
V
Low-voltage Detection threshold
(VDD falling)
(VDD rising)
VLVD
1.80
1.88
1.86
1.94
1.95
2.03
V
Power on RESET (POR) voltage
VPOR
0.9
1.4
1.7
V
Input high voltage (VDD > 2.3V) (all digital inputs)
VIH
0.70
× V
DD
——
V
Input high voltage (1.8 V
≤ V
DD ≤ 2.3 V) (all digital inputs)
VIH
0.85
× V
DD
——
V
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