參數(shù)資料
型號： M58LR128FB95ZB6E
廠商： NUMONYX
元件分類： PROM
英文描述： 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件頁數(shù)： 61/82頁
文件大?。?/td> 1303K
代理商： M58LR128FB95ZB6E
M58LR128FT, M58LR128FB
64/82
Table 36. Protection Register Information
Table 37. Burst Read Information
Offset
Data
Description
Value
(P+E)h = 118h
0002h
Number of protection register fields in JEDEC ID space. 0000h indicates that
256 fields are available.
2
(P+F)h = 119h
0080h
Protection Field 1: Protection Description
Bits 0-7 Lower byte of protection register address
Bits 8-15 Upper byte of protection register address
Bits 16-23 2n bytes in factory pre-programmed region
Bits 24-31 2n bytes in user programmable region
80h
(P+10)h = 11Ah
0000h
00h
(P+11)h = 11Bh
0003h
8 Bytes
(P+12)h = 11Ch
0003h
8 Bytes
(P+13)h = 11Dh
0089h
Protection Register 2: Protection Description
Bits 0-31 protection register address
Bits 32-39 n number of factory programmed regions (lower byte)
Bits 40-47 n number of factory programmed regions (upper byte)
Bits 48-55 2n bytes in factory programmable region
Bits 56-63 n number of user programmable regions (lower byte)
Bits 64-71 n number of user programmable regions (upper byte)
Bits 72-79 2n bytes in user programmable region
89h
(P+14)h = 11Eh
0000h
00h
(P+15)h = 11Fh
0000h
00h
(P+16)h = 120h
0000h
00h
(P+17)h = 121h
0000h
0
(P+18)h = 122h
0000h
0
(P+19)h = 123h
0000h
0
(P+1A)h = 124h
0010h
16
(P+1B)h = 125h
0000h
0
(P+1C)h = 126h
0004h
16
Offset
Data
Description
Value
(P+1D)h = 127h
0003h
Page-mode read capability
bits 0-7
’n’ such that 2n HEX value represents the number of read-
page bytes. See offset 28h for device word width to
determine page-mode data output width.
8 Bytes
(P+1E)h = 128h
0004h
Number of synchronous mode read configuration fields that follow.
4
(P+1F)h = 129h
0001h
Synchronous mode read capability configuration 1
bit 3-7
Reserved
bit 0-2
’n’ such that 2n+1 HEX value represents the maximum
number of continuous synchronous reads when the device is
configured for its maximum word width. A value of 07h
indicates that the device is capable of continuous linear
bursts that will output data until the internal burst counter
reaches the end of the device’s burstable address space.
This field’s 3-bit value can be written directly to the read
configuration register bit 0-2 if the device is configured for its
maximum word width. See offset 28h for word width to
determine the burst data output width.
4
(P+20)h = 12Ah
0002h
Synchronous mode read capability configuration 2
8
(P-21)h = 12Bh
(P+22)h = 12Ch
0003h
0007h
Synchronous mode read capability configuration 3
16
Synchronous mode read capability configuration 4
Cont.
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相關代理商/技術參數(shù)
參數(shù)描述
M58LR128FB95ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FB95ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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