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參數(shù)資料
| 型號： | M58LR128FB95ZB6E |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56 |
| 封裝： | 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56 |
| 文件頁數(shù)： | 29/82頁 |
| 文件大小： | 1303K |
| 代理商： | M58LR128FB95ZB6E |
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M58LR128FT, M58LR128FB
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 15. In the M58LR128FT/B the maximum num-
ber of Program/ Erase cycles depends on the
voltage supply used.
Table 15. Program, Erase Times and Endurance Cycles
Note: 1. TA = –40 to 85°C; VDD = 1.7V to 2.0V; VDDQ = 1.7V to 2.0V.
2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution).
3. Excludes the time needed to execute the command sequence.
4. Average on entire device.
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
V
PP
=
V
DD
Erase
Parameter Block
(16 KWords)
Preprogrammed
0.65
1
2.5
s
Not Preprogrammed
0.8
2.5
s
Main Block (64
KWords)
Preprogrammed
1.4
3
4
s
Not Preprogrammed
1.8
4
s
Program(3)
Single Cell
Word Program
10
100
s
Buffer Program
10
s
Single Word
Word Program
10
100
s
Buffer Program
10
s
Buffer (32 Words) (Buffer Program)
320
s
Main Block (64 KWords)
640
ms
Suspend Latency
Program
5
10
s
Erase
5
25
s
Program/Erase
Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
V
PP
=
V
PP
H
Erase
Parameter Block (16 KWords)
0.7
2.5
s
Main Block (64 KWords)
1.2
4
s
Program(3)
Single Cell
Word Program
10
100
s
Single Word
Word Program
10
100
s
Buffered Enhanced
Factory Program(4)
3.5
s
Buffer (32
Words)
Word Program
320
s
Buffered Enhanced
Factory Program(4)
100
s
Main Block (64
KWords)
Word Program
640
ms
Buffered Enhanced
Factory Program(4)
200
ms
Bank (8 Mbits)
Word Program
5
s
Buffered Enhanced
Factory Program(4)
1.6
s
Program/Erase
Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LR128FB95ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FB95ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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