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參數(shù)資料
| 型號： | M58LR128FB95ZB6E |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56 |
| 封裝： | 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56 |
| 文件頁數(shù)： | 32/82頁 |
| 文件大小： | 1303K |
| 代理商： | M58LR128FB95ZB6E |
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M58LR128FT, M58LR128FB
38/82
Table 19. DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. VDD Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQ
±1
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDQ
±1
A
IDD1
Supply Current
Asynchronous Read (f=6MHz)
E = VIL, G = VIH
10
15
mA
Supply Current
Synchronous Read (f=40MHz)
4 Word
7
16
mA
8 Word
10
18
mA
16 Word
13
20
mA
Continuous
18
25
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
16
18
mA
8 Word
18
20
mA
16 Word
21
25
mA
Continuous
22
27
mA
IDD2
Supply Current
(Reset)
RP = VSS ± 0.2V
25
70
A
IDD3
Supply Current (Standby)
E = VDD ± 0.2V
25
70
A
IDD4
Supply Current (Automatic
Standby)
E = VIL, G = VIH
25
70
A
IDD5
(1)
Supply Current (Program)
VPP = VPPH
815
mA
VPP = VDD
10
20
mA
Supply Current (Erase)
VPP = VPPH
815
mA
VPP = VDD
10
20
mA
IDD6
(1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
20
35
mA
Program/Erase in one
Bank, Synchronous
Read in another Bank
32
47
mA
IDD7
(1)
Supply Current Program/ Erase
Suspended (Standby)
E = VDD ± 0.2V
25
70
A
IPP1
(1)
VPP Supply Current (Program)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
A
VPP Supply Current (Erase)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
A
IPP2
VPP Supply Current (Read)
VPP ≤ VDD
0.2
5
A
IPP3
(1)
VPP Supply Current (Standby)
VPP ≤ VDD
0.2
5
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LR128FB95ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FB95ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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