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參數(shù)資料
| 型號： | M58LR128FB95ZB6E |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56 |
| 封裝： | 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56 |
| 文件頁數(shù)： | 59/82頁 |
| 文件大?。?/td> | 1303K |
| 代理商： | M58LR128FB95ZB6E |
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M58LR128FT, M58LR128FB
62/82
Table 34. Device Geometry Definition
Offset Word
Mode
Data
Description
Value
027h
0018h
Device Size = 2n in number of bytes
16 MBytes
028h
029h
0001h
0000h
Flash Device Interface Code description
x16
Async.
02Ah
02Bh
0006h
0000h
Maximum number of bytes in multi-byte program or page = 2n
64 Bytes
02Ch
0002h
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
2
M
5
8L
R1
28
FT
02Dh
02Eh
007Eh
0000h
Region 1 Information
Number of identical-size erase blocks = 007Eh+1
127
02Fh
030h
0000h
0002h
Region 1 Information
Block size in Region 1 = 0200h * 256 Byte
128 KByte
031h
032h
0003h
0000h
Region 2 Information
Number of identical-size erase blocks = 0003h+1
4
033h
034h
0080h
0000h
Region 2 Information
Block size in Region 2 = 0080h * 256 Byte
32 KByte
035h
038h
Reserved
Reserved for future erase block region information
NA
M5
8L
R1
28
FB
02Dh
02Eh
0003h
0000h
Region 1 Information
Number of identical-size erase block = 0003h+1
4
02Fh
030h
0080h
0000h
Region 1 Information
Block size in Region 1 = 0080h * 256 bytes
32 KBytes
031h
032h
007Eh
0000h
Region 2 Information
Number of identical-size erase block = 007Eh+1
127
033h
034h
0000h
0002h
Region 2 Information
Block size in Region 2 = 0200h * 256 bytes
128 KBytes
035h
038h
Reserved
Reserved for future erase block region information
NA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LR128FB95ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FB95ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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