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參數(shù)資料
| 型號： | LT1158 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Half Bridge N-Channel Power MOSFET Driver(半橋,N-溝道功率MOS場效應(yīng)管驅(qū)動器) |
| 中文描述： | 半橋N溝道功率MOSFET驅(qū)動器（半橋的N溝道功率馬鞍山場效應(yīng)管驅(qū)動器） |
| 文件頁數(shù)： | 7/20頁 |
| 文件大?。?/td> | 346K |
| 代理商： | LT1158 |
LT1158
7
(Refer to Functional Diagram)
Whenever there is an input transition on pin 6, the LT1158
follows a logical sequence to turn off one MOSFET and
turn on the other. First, turn-off is initiated, then V
GS
is
monitored until it has decreased below the turn-off thresh-
old, and finally the other gate is turned on. An input latch
gets reset by every low state at pin 6, but can only be set
if the top source pin has gone low, indicating that there will
be sufficient charge in the bootstrap capacitor to safely
turn on the top MOSFET.
In order to conserve power, the gate drivers only provide
turn-on current for up to 2
μ
s, set by internal one-shot
circuits. Each LT1158 driver can deliver 500mA for 2
μ
s, or
1000nC of gate charge––more than enough to turn on
multiple MOSFETs in parallel. Once turned on, each gate is
held high by a DC gate sustaining current: the bottom gate
by a 100
μ
A current source, and the top gate by an on-chip
charge pump running at approximately 500kHz.
The floating supply for the top side driver is provided by
a bootstrap capacitor between the boost pin 16 and top
source pin 13. This capacitor is recharged each time pin
The LT1158 self-enables via an internal 25
μ
A pull-up on
the enable pin 4. When pin 4 is pulled down, much of the
input logic is disabled, reducing supply current to 2mA.
With pin 4 low, the input state is ignored and both MOSFET
gates are actively held low. With pin 4 enabled, one or the
other of the 2 MOSFETs is turned on, depending on the
state of the input pin 6: high for top side on, and low for
bottom side on. The 1.4V input threshold is regulated and
has 200mV of hysteresis.
In order to allow operation over 5V to 30V nominal supply
voltages, an internal bias generator is employed to furnish
constant bias voltages and currents. The bias generator is
decoupled at pin 3 to eliminate any effects from switching
transients. No DC loading is allowed on pin 3
The top and bottom gate drivers in the LT1158 each utilize
two gate connections: 1) A gate drive pin, which provides
the turn-on and turn-off currents through an optional
series gate resistor; and 2) A gate feedback pin which
connects directly to the gate to monitor the gate-to-source
voltage and supply the DC gate sustaining current.
0.01
μ
F
LT1158 TC01
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
BOOST
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
–
V
+
B GATE DR
BOOST DR
V
+
BIAS
ENABLE
FAULT
INPUT
GND
B GATE FB
+
V
+
+
3000pF
1
μ
F
+
+
V16
+
V11
+
V12
3000pF
+
V8
V6
50
+
V4
3k
1/2W
150
2W
+
V14 – V13
LT1158
VN2222LL
100
10
μ
F
CLOSED
LOOP
2k
1/2W
TEST CIR
OPERATIOU
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LT1160 | Half-/Full-Bridge N-Channel Power MOSFET Drivers(半橋,N-溝道功率MOS場效應(yīng)管驅(qū)動器) |
| LT1161 | 1-of-8 Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 |
| LT1161C | Quad Protected High-Side MOSFET Driver |
| LT1161CN | Quad Protected High-Side MOSFET Driver |
| LT1161CS | Quad Protected High-Side MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1158C | 制造商:LINER 制造商全稱:Linear Technology 功能描述:Half Bridge N-Channel Power MOSFET Driver |
| LT1158CN | 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1158CN#PBF | 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LT1158CS | 制造商:Linear Technology 功能描述: 制造商:LINEAR_TECH 功能描述: |
| LT1158CSW | 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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