參數(shù)資料
型號： LT1158
廠商： Linear Technology Corporation
英文描述： Half Bridge N-Channel Power MOSFET Driver(半橋,N-溝道功率MOS場效應管驅動器)
中文描述： 半橋N溝道功率MOSFET驅動器（半橋的N溝道功率馬鞍山場效應管驅動器）
文件頁數(shù)： 1/20頁
文件大?。?/td> 346K
代理商： LT1158
LT1158
1
Half Bridge N-Channel
Power MOSFET Driver
I
Drives Gate of Top Side MOSFET Above V
+
I
Operates at Supply Voltages from 5V to 30V
I
150ns Transition Times Driving 3000pF
I
Over 500mA Peak Driver Current
I
Adaptive Non-Overlap Gate Drives
I
Continuous Current Limit Protection
I
Auto Shutdown and Retry Capability
I
Internal Charge Pump for DC Operation
I
Built-In Gate Voltage Protection
I
Compatible with Current-Sensing MOSFETs
I
TTL/CMOS Input Levels
I
Fault Output Indication
A single input pin on the LT1158 synchronously controls
two N-channel power MOSFETs in a totem pole configura-
tion. Unique adaptive protection against shoot-through
currents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
A continuous current limit loop in the LT1158 regulates
short-circuit current in the top power MOSFET. Higher
start-up currents are allowed as long as the MOSFET V
DS
does not exceed 1.2V. By returning the fault output to the
enable input, the LT1158 will automatically shut down in
the event of a fault and retry when an internal pull-up
current has recharged the enable capacitor.
An on-chip charge pump is switched in when needed to
turn on the top N-channel MOSFET continuously. Special
circuitry ensures that the top side gate drive is safely
maintained in the transition between PWM and DC opera-
tion. The gate-to-source voltages are internally limited to
14.5V when operating at higher supply voltages.
FEATURES
DESCRIPTIO
N
U
Top and Bottom Gate Waveforms
+
–
+
+
R
0.015
500
μ
F
OW
ESR
0.1
μ
F
IRFZ34
IRFZ34
24V
1N4148
10
μ
F
1
μ
F
0.01
μ
F
PWM
0Hz TO
100kHz
BOOST
BOOST DR
V
+
V
+
INPUT
ENABLE
FAULT
BIAS
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
–
B GATE DR
B GATE FB
GND
LT1158
+
LOAD
LT1158 TA01
TYPICAL APPLICATIO
N
U
V
IN
= 24V
R
L
= 12
1158 TA02
I
PWM of High Current Inductive Loads
I
Half Bridge and Full Bridge Motor Control
I
Synchronous Step-Down Switching Regulators
I
Three-Phase Brushless Motor Drive
I
High Current Transducer Drivers
I
Battery-Operated Logic-Level MOSFETs
APPLICATIO
S
U
相關PDF資料
PDF描述
LT1160 Half-/Full-Bridge N-Channel Power MOSFET Drivers(半橋,N-溝道功率MOS場效應管驅動器)
LT1161 1-of-8 Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70
LT1161C Quad Protected High-Side MOSFET Driver
LT1161CN Quad Protected High-Side MOSFET Driver
LT1161CS Quad Protected High-Side MOSFET Driver
相關代理商/技術參數(shù)
參數(shù)描述
LT1158C 制造商:LINER 制造商全稱:Linear Technology 功能描述:Half Bridge N-Channel Power MOSFET Driver
LT1158CN 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1158CN#PBF 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF)
LT1158CS 制造商:Linear Technology 功能描述: 制造商:LINEAR_TECH 功能描述:
LT1158CSW 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
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