參數(shù)資料
型號(hào): LT1158
廠商: Linear Technology Corporation
英文描述: Half Bridge N-Channel Power MOSFET Driver(半橋,N-溝道功率MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器)
中文描述: 半橋N溝道功率MOSFET驅(qū)動(dòng)器(半橋的N溝道功率馬鞍山場(chǎng)效應(yīng)管驅(qū)動(dòng)器)
文件頁(yè)數(shù): 15/20頁(yè)
文件大?。?/td> 346K
代理商: LT1158
LT1158
15
from a true short. This is done by using the current limit to
control cold filament current in conjunction with the self-
protection circuit of Figure 9. The reduced cold filament
current also extends the life of the filament.
A good guideline is to choose R
SENSE
to set I
SC
at approxi-
mately twice the steady state “on” current of the lamp(s).
t
SHUTDOWN
is then made long enough to guarantee that the
lamp filaments heat and drop out of current limit before the
enable capacitor discharges to the enable low threshold.
For a short circuit, the enable capacitor will continue to
discharge below the threshold, shutting down the top
MOSFET. The LT1158 will then go into the automatic
restart mode described in
Self-Protection with Automatic
Restart
above.
The time constant for an incandescent filament is tens of
milliseconds, which means that t
SHUTDOWN
will have to be
longer than in most other applications. This places in-
creased SOA demands on the MOSFET during a short
circuit, requiring that a larger than normal device be used.
A protected high current lamp driver application is shown
in Figure 18.
0.01
μ
F
LT1158 F10
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
BOOST
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
V
+
B GATE DR
BOOST DR
V
+
BIAS
ENABLE
FAULT
INPUT
GND
B GATE FB
LT1158
+
1N4148
10
μ
F
24k
1000pF
0.05
μ
F
1k
510
1N4148
1
2
3
4
8
7
6
5
LT1431
+
1000
μ
F
LOW ESR
500
μ
F
LOW ESR
R
S
0.015
L1
22
μ
H
SHORT-CIRCUIT
CURRENT = 8A
200pF
+3.3V/6A
OUTPUT
5V TO 10V INPUT (USE LOGIC-LEVEL Q1, Q2)
8V TO 20V INPUT (USE STANDARD Q1, Q2
AND CONNECT BOOST DIODE TO PIN 1)
Q1
680k
+
0.1
μ
F
×
100
100
Q2
VP0300
INSERT FOR
ZERO POWER
SHUTDOWN
100k
CMOS
ON/OFF
2N2222
+
100k
Q1, Q2: IRLZ44 (LOGIC-LEVEL)
IRFZ44 (STANDARD)
L1: HURRICANE LAB
HL-KK122T/BB
R
: VISHAY/DALE TYPE LVR-3
VISHAY/ULTRONIX RCS01, SM1
ISOTEK CORP. ISA-PLAN SMR
CONSTANT OFF TIME CURRENT MODE CONTROL LOOP
FREQUENCY = t
OFF
10
μ
s
OFF
( )
1 – V
OUT
4.99k
1%
1.62k
1%
Figure 10. High Efficiency 3.3V Step-Down Switching Regulator (Requires No Heatsinks)
APPLICATIO
S I
N
FOR
ATIO
U
W
U
TYPICAL APPLICATIO
N
S
相關(guān)PDF資料
PDF描述
LT1160 Half-/Full-Bridge N-Channel Power MOSFET Drivers(半橋,N-溝道功率MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器)
LT1161 1-of-8 Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70
LT1161C Quad Protected High-Side MOSFET Driver
LT1161CN Quad Protected High-Side MOSFET Driver
LT1161CS Quad Protected High-Side MOSFET Driver
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LT1158C 制造商:LINER 制造商全稱:Linear Technology 功能描述:Half Bridge N-Channel Power MOSFET Driver
LT1158CN 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1158CN#PBF 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端,獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF)
LT1158CS 制造商:Linear Technology 功能描述: 制造商:LINEAR_TECH 功能描述:
LT1158CSW 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063