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參數(shù)資料
| 型號： | LT1158 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Half Bridge N-Channel Power MOSFET Driver(半橋,N-溝道功率MOS場效應管驅(qū)動器) |
| 中文描述： | 半橋N溝道功率MOSFET驅(qū)動器（半橋的N溝道功率馬鞍山場效應管驅(qū)動器） |
| 文件頁數(shù)： | 14/20頁 |
| 文件大小： | 346K |
| 代理商： | LT1158 |
LT1158
14
t
SHUTDOWN
becomes more difficult to analyze when the
output is shorted with a PWM input. This is because the
fault pin only conducts when fault currents are actually
present in the MOSFET. Fault does not conduct while the
input is low in Figures 6 and 7 or during the interval I
DS
=
0 in Figure 8. Thus t
SHUTDOWN
will safely increase when
the duty cycle of the current in the top MOSFET is low,
maintaining the average MOSFET current at a relatively
constant level.
The length of time following shutdown before restart is
attempted is given by:
=
25
μ
t
V
A
C
C
RESTART
EN
EN
=
1 5
6 10
4
In Figure 9, the top MOSFET would shut down after being
in DC current limit for 0.9ms and try to restart at 60ms
intervals, thus producing a duty cyle of 1.5% in short
circuit. The resulting average top MOSFET dissipation
during a short is easily measured by taking the product of
the supply voltage and the average supply current.
Starting High In-Rush Current Loads
The LT1158 has a V
DS
sensing function which allows more
than I
SC
to flow in the top MOSFET providing that the
Figure 9. Self-Protection with Auto Restart
This calculation gives the minimum current which could
be delivered with the IRFZ34 at T
J
= 125
°
C without activat-
ing the fault pin on the LT1158. If more start current is
required, using an IRFZ44 (R
DS(ON)
= 0.028
max.) would
increase I
START
to over 15A at T
J
= 110
°
C, even though the
short-circuit current remains at 5A.
In order for the V
DS
sensing function to work properly, the
supply pins for the LT1158 must be connected at the drain
of the top MOSFET, which must be properly decoupled
(see
Ugly Transient Issues
).
Driving Lamps
Incandescent lamps represent a challenging load because
they have much in common with a short circuit when cold.
The top gate driver in the LT1158 can be configured to turn
on large lamps while still protecting the power MOSFET
Note that for the first event only, t
SHUTDOWN
is approxi-
mately twice the above value since C
EN
is being discharged
all the way from its quiescent voltage. Allowable values for
R
F
are from zero to 10k.
FAULT
LT1158
C
EN
1
μ
F
+
1158 F09
R
F
1k
7.5V
1.15V
ENABLE
OPTIONAL THERMOSTAT
CLOSE ON RISE
AIRPAX #67FXXX
25
μ
A
7.5V
sense
–
pin is within 1.2V of supply. Under these condi-
tions the current is limited only by the R
DS(ON)
in series
with R
SENSE
. For a 5-lead MOSFET the current is limited by
R
DS(ON)
alone, since R
SENSE
is not in the output path (see
Figure 7). Again adjusting R
DS(ON)
for temperature, the
worst-case start currents are:
I
V
R
R
I
V
R
START
DS ON
1 2
SENSE
START
DS ON
=
+
(
)
+
=
+
(
)
1 2
.
1
1
Properly sizing the MOSFET for I
START
allows inductive
loads with long time constants, such as motors with high
mechanical inertia, to be started.
Returning to the example used in
Power MOSFET Selec-
tion
, an IRFZ34 (R
DS(ON)
= 0.05
max.) was selected for
operation at 5A. If the short-circuit current is also set at 5A,
what start current can be supported From the equation
for R
SENSE
, a 0.03
shunt would be required, allowing the
worst-case start current to be calculated:
I
V
A
START
=
( )
+
=
1 2
1 7 0 05
.
0 03
10
.
5-Lead MOSFET
3-Lead MOSFET
APPLICATIO
S I
FOR
ATIO
U
W
U
U
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|---|---|
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1158C | 制造商:LINER 制造商全稱:Linear Technology 功能描述:Half Bridge N-Channel Power MOSFET Driver |
| LT1158CN | 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1158CN#PBF | 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LT1158CS | 制造商:Linear Technology 功能描述: 制造商:LINEAR_TECH 功能描述: |
| LT1158CSW | 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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