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參數(shù)資料
| 型號： | LT1158 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Half Bridge N-Channel Power MOSFET Driver(半橋,N-溝道功率MOS場效應(yīng)管驅(qū)動器) |
| 中文描述： | 半橋N溝道功率MOSFET驅(qū)動器（半橋的N溝道功率馬鞍山場效應(yīng)管驅(qū)動器） |
| 文件頁數(shù)： | 12/20頁 |
| 文件大?。?/td> | 346K |
| 代理商： | LT1158 |
LT1158
12
Figure 5. Adding Zero Current Shutdown
Short-Circuit Protection in Bridge Applications
The LT1158 protects the top power MOSFET from output
shorts to ground, or in a full bridge application, shorts
across the load. Both standard 3-lead MOSFETs and
current-sensing 5-lead MOSFETs can be protected. The
bottom MOSFET is not protected from shorts to supply.
Current is sensed by measuring the voltage across a
current shunt in the source lead of a standard 3-lead
MOSFET (Figure 6). For the current-sensing MOSFET
Low Current Shutdown
The LT1158 may be shutdown to a current level of 2mA by
pulling the enable pin 4 low. In this state both the top and
bottom MOSFETs are actively held off against any tran-
sients which might occur on the output during shutdown.
This is important in applications such as 3-phase DC
motor control when one of the phases is disabled while the
other two are switching.
If zero standby current is required and the load returns to
ground, then a switch can be inserted into the supply path
of the LT1158 as shown in Figure 5. Resistor R
GS
ensures
that the top MOSFET gate discharges, while the voltage
across the bottom MOSFET goes to zero. The voltage drop
across the P-channel supply switch must be less than
300mV, and R
GS
must be 330k or greater for DC operation.
This technique is not recommended for applications which
require the LT1158 V
DS
sensing function.
100k
V
+
V
+
LT1158
+
VP0300
R
GS
1158 F05
LOAD
GND
+
TO OTHER
CONTROL
CIRCUITS
CMOS
ON/OFF
100k
V
+
T GATE DR
T GATE FB
T SOURCE
B GATE DR
B GATE FB
2N2222
shown in Figure 7, the sense resistor is inserted between
the sense and Kelvin leads.
The sense
+
and sense
–
PC traces must be routed together
at minimum spacing to prevent stray pickup, and a Kelvin
connection must be used at the current shunt for the 3-
lead MOSFET. Using a twisted pair is the safest approach
and is recommended for sense runs of several inches.
When the voltage across R
SENSE
exceeds 110mV, the
LT1158 fault pin begins to conduct, signaling a fault
condition. The current in a short circuit ramps very rapidly,
limited only by the series inductance and ultimately the
MOSFET and shunt resistance. Due to the response time
of the LT1158 current limit loop, an initial current spike of
Figure 7. Short-Circuit Protection with Current-Sensing MOSFET
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
–
FAULT
LT1158
5V
+
V
+
1158 F07
10k
R
SENSE
KELVIN
SENSE
OUTPUT
Figure 6. Short-Circuit Protection with Standard MOSFET
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
–
FAULT
LT1158
R
SENSE
5V
+
V
+
1158 F06
10k
APPLICATIO
S I
FOR
ATIO
U
W
U
U
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LT1160 | Half-/Full-Bridge N-Channel Power MOSFET Drivers(半橋,N-溝道功率MOS場效應(yīng)管驅(qū)動器) |
| LT1161 | 1-of-8 Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 |
| LT1161C | Quad Protected High-Side MOSFET Driver |
| LT1161CN | Quad Protected High-Side MOSFET Driver |
| LT1161CS | Quad Protected High-Side MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1158C | 制造商:LINER 制造商全稱:Linear Technology 功能描述:Half Bridge N-Channel Power MOSFET Driver |
| LT1158CN | 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1158CN#PBF | 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LT1158CS | 制造商:Linear Technology 功能描述: 制造商:LINEAR_TECH 功能描述: |
| LT1158CSW | 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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