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參數(shù)資料
| 型號(hào)： | LT1158 |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Half Bridge N-Channel Power MOSFET Driver(半橋,N-溝道功率MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器) |
| 中文描述： | 半橋N溝道功率MOSFET驅(qū)動(dòng)器（半橋的N溝道功率馬鞍山場(chǎng)效應(yīng)管驅(qū)動(dòng)器） |
| 文件頁(yè)數(shù)： | 9/20頁(yè) |
| 文件大?。?/td> | 346K |
| 代理商： | LT1158 |
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LT1158
9
high frequency oscillations––consult manufacturer’s rec-
ommendations. If individual gate decoupling resistors are
used, the gate feedback pins can be connected to any one
of the gates.
Driving multiple MOSFETs in parallel may restrict the
operating frequency at high supply voltages to prevent
over-dissipation in the LT1158 (see
Gate Charge and
Driver Dissipation
below). When the total gate capaci-
tance exceeds 10,000pF on the top side, the bootstrap
capacitor should be increased proportionally above 0.1
μ
F.
Gate Charge and Driver Dissipation
A useful indicator of the load presented to the driver by a
power MOSFET is the total gate charge Q
G
, which includes
the additional charge required by the gate-to-drain swing.
Q
G
is usually specified for V
GS
= 10V and V
DS
= 0.8V
DS(MAX)
.
When the supply current is measured in a switching
application, it will be larger than given by the DC electrical
characteristics because of the additional supply current
associated with sourcing the MOSFET gate charge:
+
I
I
dQ
dt
dQ
dt
SUPPLY
DC
G
TOP
G
BOTTOM
=
+
The actual increase in supply current is slightly higher due
to LT1158 switching losses and the fact that the gates are
being charged to more than 10V. Supply current vs.
switching frequency is given in the Typical Performance
Characteristics.
The LT1158 junction temperature can be estimated by
using the equations given in Note 1 of the electrical
characteristics. For example, the LT1158SI is limited to
less than 25mA from a 24V supply:
T
J
= 85
°
C + (25mA
×
24V
×
110
°
C/W)
= 151
°
C exceeds absolute maximum
In order to prevent the maximum junction temperature
from being exceeded, the LT1158 supply current must be
checked with the actual MOSFETs operating at the maxi-
mum switching frequency.
MOSFET Gate Drive Protection
For supply voltages of over 8V, the LT1158 will protect
standard N-channel MOSFETs from under or overvoltage
gate drive conditions for any input duty cycle including DC.
Gate-to-source zener clamps are not required and not
recommended since they can reduce operating efficiency.
A discontinuity in tracking between the output pulse width
and input pulse width may be noted as the top side
MOSFET approaches 100% duty cycle. As the input low
signal becomes narrower, it may become shorter than the
time required to recharge the bootstrap capacitor to a safe
voltage for the top side driver. Below this duty cycle the
output pulse width will stop tracking the input until the
input low signal is <100ns, at which point the output will
jump to the DC condition of top MOSFET “on” and bottom
MOSFET “off.”
Low Voltage Operation
The LT1158 can operate from 5V supplies (4.5V min.) and
in 6V battery-powered applications by using logic-level
N-channel power MOSFETs. These MOSFETs have 2V
maximum threshold voltages and guaranteed R
DS(ON)
limits at V
GS
= 4V. The switching speed of the LT1158,
unlike CMOS drivers, does not degrade at low supply
voltages. For operation down to 4.5V, the boost pin should
be connected as shown in Figure 2 to maximize gate drive
to the top side MOSFET. Supply voltages over 10V should
not be used with logic-level MOSFETs because of their
lower maximum gate-to-source voltage rating.
0.1
μ
F
+
LT1158 F02
5V
D1
D1: LOW-LEAKAGE SCHOTTKY
BAT85 OR EQUIVALENT
LOGIC-LEVEL
MOSFET
N.C.
BOOST
T GATE DR
T GATE FB
T SOURCE
LT1158
BOOST DR
Figure 2. Low Voltage Operation
APPLICATIO
S I
N
FOR
ATIO
U
W
U
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PDF描述 |
|---|---|
| LT1160 | Half-/Full-Bridge N-Channel Power MOSFET Drivers(半橋,N-溝道功率MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器) |
| LT1161 | 1-of-8 Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 |
| LT1161C | Quad Protected High-Side MOSFET Driver |
| LT1161CN | Quad Protected High-Side MOSFET Driver |
| LT1161CS | Quad Protected High-Side MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT1158C | 制造商:LINER 制造商全稱:Linear Technology 功能描述:Half Bridge N-Channel Power MOSFET Driver |
| LT1158CN | 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LT1158CN#PBF | 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF) |
| LT1158CS | 制造商:Linear Technology 功能描述: 制造商:LINEAR_TECH 功能描述: |
| LT1158CSW | 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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