參數(shù)資料
型號(hào)： LT1158
廠商： Linear Technology Corporation
英文描述： Half Bridge N-Channel Power MOSFET Driver(半橋,N-溝道功率MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器)
中文描述： 半橋N溝道功率MOSFET驅(qū)動(dòng)器（半橋的N溝道功率馬鞍山場(chǎng)效應(yīng)管驅(qū)動(dòng)器）
文件頁(yè)數(shù)： 13/20頁(yè)
文件大?。?/td> 346K
代理商： LT1158
LT1158
13
value of R
SENSE
for the 5-lead MOSFET increases by the
current sensing ratio (typically 1000 – 3000), thus elimi-
nating the need for a low valued shunt.
V is in the range
of 1V to 3V in most applications.
Assuming a dead short, the MOSFET dissipation will rise
to V
SUPPLY
×
I
SC
. For example, with a 24V supply and I
SC
= 10A, the dissipation would be 240W. To determine how
long the MOSFET can remain at this dissipation level
before it must be shut down, refer to the SOA curves given
in the MOSFET data sheet. For example, an IRFZ34 would
be safe if shut down within 10ms.
A Tektronix A6303 current probe is highly recommended
for viewing output fault currents.
If Short-Circuit Protection is Not Required
In applications which do not require the current sense
capability of the LT1158, the sense pins 11 and 12 should
both be connected to pin 13, and the fault pin 5 left open.
The enable pin 4 may still be used to shut down the device.
Note, however, that when unprotected the top MOSFET
can be easily (and often dramatically) destroyed by even a
momentary short.
Self-Protection with Automatic Restart
When using the current sense circuits of Figures 6 and 7,
local shutdown can be achieved by connecting the fault pin
through resistor R
F
to the enable pin as shown in Figure 9.
An optional thermostat mounted to the load or MOSFET
heatsink can also be used to pull enable low.
An internal 25
μ
A current source normally keeps the en-
able capacitor C
EN
charged to the 7.5V clamp voltage (or
to V
+
, for V
+
< 7.5V). When a fault occurs, C
EN
is dis-
charged to below the enable low threshold (1.15V typ.)
which shuts down both MOSFETs. When the fault pin or
thermostat releases, C
EN
recharges to the upper enable
threshold where restart is attempted. In a sustained short
circuit, fault will again pull low and the cycle will repeat
until the short is removed. The time to shut down for a DC
input or thermal fault is given by:
t
SHUTDOWN
= (100 + 0.8R
F
) C
EN
DC input
If neither the enable nor input pins are pulled low in
response to the fault indication, the top MOSFET current
will recover to a steady-state value I
SC
regulated by the
LT1158 as shown in Figure 8:
Standard 3-Lead
MOSFET
5-Lead
MOSFET
from 2 to 5 times the final value will be present for a few
μ
s, followed by an interval in which I
DS
= 0. The current
spike is normally well within the safe operating area (SOA)
of the MOSFET, but can be further reduced with a small
(0.5
μ
H) inductor in series with the output.
5
μ
s/DIV
LT1158 F08
5
I
SC
Figure 8. Top MOSFET Short-Circuit Turn-On current
I
SC
=
=
=
(
)
=
(
)
=
=
150mV
R
SENSE
R
150mV
I
SC
I
r 150mV
R
1
150mV
V
R
r 150mV
I
1
150mV
V
sense ratio, V = V
current
SENSE
SC
SENSE
2
SENSE
SC
2
GS
r
V
V
GS
T
The time for the current to recover to I
SC
following the
initial current spike is approximately Q
GS
/0.5mA, where
Q
GS
is the MOSFET gate-to-source charge. I
SC
need not be
set higher than the required start-up current for motors
(see
Starting High In-Rush Current Loads
). Note that the
APPLICATIO
S I
FOR
ATIO
U
W
U
U
相關(guān)PDF資料
PDF描述
LT1160 Half-/Full-Bridge N-Channel Power MOSFET Drivers(半橋,N-溝道功率MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器)
LT1161 1-of-8 Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70
LT1161C Quad Protected High-Side MOSFET Driver
LT1161CN Quad Protected High-Side MOSFET Driver
LT1161CS Quad Protected High-Side MOSFET Driver
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LT1158C 制造商:LINER 制造商全稱:Linear Technology 功能描述:Half Bridge N-Channel Power MOSFET Driver
LT1158CN 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LT1158CN#PBF 功能描述:IC MOSFET DRVR 1/2BRDG NCH 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF)
LT1158CS 制造商:Linear Technology 功能描述: 制造商:LINEAR_TECH 功能描述:
LT1158CSW 功能描述:IC MOSFET DRVR 1/2BRDG NCH16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*