參數(shù)資料
型號： LPC2917
廠商： NXP Semiconductors N.V.
元件分類： 32位微控制器
英文描述： ARM9 microcontroller with CAN and LIN
中文描述： 具有CAN和LIN的ARM9微控制器
文件頁數(shù)： 56/68頁
文件大?。?/td> 384K
代理商： LPC2917
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LPC2917_19_1
NXP B.V. 2007. All rights reserved.
Preliminary data sheet
Rev. 1.01 — 15 November 2007
56 of 68
NXP Semiconductors
LPC2917/19
ARM9 microcontroller with CAN and LIN
Internal clock
f
clk(sys)
System clock
frequency. See
Table 23
.
System clock period.
See
Table 23
.
10
-
80
MHz
T
clk(sys)
12.5
-
100
ns
Low-Power Ring Oscillator
f
ref(RO)
RO reference
frequency.
Start-up time.
0.36
0.4
0.42
MHz
t
startup
At maximum frequency
[2]
.
-
6
100
μ
s
Oscillator
f
i(osc)
Oscillator input
frequency.
Maximum frequency is
the clock input of an
external clock source
applied to the Xin pin.
At maximum frequency.
[2]
[3]
10
-
80
MHz
t
startup
Start-up time.
-
500
-
μ
s
PLL
f
i(PLL)
f
o(PLL)
PLL input frequency.
PLL output frequency.
10
10
156
-
-
-
25
160
320
MHz
MHz
MHz
CCO; direct mode.
Analog-to-digital converter
f
i(ADC)
f
s(max)
ADC input frequency.
Maximum sampling
rate.
[4]
4
-
4.5
MHz
f
i(ADC)
= 4.5 MHz;
f
s
= f
i(ADC)
/(n+1) with
n = resolution
resolution 2 bit
resolution 10 bit
In number of ADC clock
cycles.
In number of bits.
-
-
3
-
-
-
1500
400
11
ksample/s
ksample/s
cycles
t
conv
Conversion time.
2
-
10
bits
Flash memory
t
init
t
wr(pg)
t
er(sect)
t
fl(BIST)
t
acc(clk)
t
acc(addr)
external static memory controller
t
a(R)int
Initialization time.
Page write time.
Sector erase time.
Flash word BIST time.
clock access time
address access time
-
0.95
95
-
-
-
-
1
100
38
-
-
150
1.05
105
70
63.4
60.3
μ
s
ms
ms
ns
ns
ns
Internal read-access
time.
-
-
20.5
ns
Table 31.
V
DD(CORE)
= V
DD(OSC_PLL)
; V
DD(IO)
= 2.7 V to 3.6 V; V
DD(A3V3)
= 3.0 V to 3.6 V; T
vj
=
40
°
C; all voltages are measured with
respect to ground; positive currents flow into the IC; unless otherwise specified.
Symbol
Parameter
Conditions
Dynamic characteristics
…continued
Min
Typ
Max
Unit
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