參數(shù)資料
型號： KBE00F005A-D411
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb NAND*2 + 256Mb Mobile SDRAM*2
中文描述： 的512Mb的NAND * 2 256Mb的移動SDRAM * 2
文件頁數(shù)： 67/87頁
文件大小： 1353K
代理商： KBE00F005A-D411
KBE00F005A-D411
MCP MEMORY
June 2005
67
Revision 1.0
*NOTE:
1. All entries assume the CKE was active (High) during the precharge clock and the current clock cycle.
2. Illegal to bank in specified state ; Function may be Iegal in the bank indicated by BA, depending on the
state of that bank.
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA (and A
10
/AP).
5. Illegal if any bank is not idle.
Abbreviations : RA = Row Address BA = Bank Address
NOP = No Operation Command CA = Column Address AP = Auto Precharge
FUNCTION TRUTH TABLE (TABLE 1)
Current
CS
RAS
CAS
WE
BA
Address
Action
Note
Precharging
H
X
X
X
X
X
NOP --> Idle after t
RP
L
H
H
H
X
X
NOP --> Idle after t
RP
L
H
H
L
X
X
ILLEGAL
2
L
H
L
X
BA
CA
ILLEGAL
2
L
L
H
H
BA
RA
ILLEGAL
2
L
L
H
L
BA
A
10
/AP
NOP --> Idle after t
RP
4
Row
Activating
L
L
L
X
X
X
ILLEGAL
H
X
X
X
X
X
NOP --> Row Active after t
RCD
L
H
H
H
X
X
NOP --> Row Active after t
RCD
L
H
H
L
X
X
ILLEGAL
2
L
H
L
X
BA
CA
ILLEGAL
2
L
L
H
H
BA
RA
ILLEGAL
2
L
L
H
L
BA
A
10
/AP
ILLEGAL
2
L
L
L
X
X
X
ILLEGAL
Refreshing
H
X
X
X
X
X
NOP --> Idle after t
RC
L
H
H
X
X
X
NOP --> Idle after t
RC
L
H
L
X
X
X
ILLEGAL
L
L
H
X
X
X
ILLEGAL
L
L
L
X
X
X
ILLEGAL
Mode
Register
Accessing
H
X
X
X
X
X
NOP --> Idle after 2 clocks
L
H
H
H
X
X
NOP --> Idle after 2 clocks
L
H
H
L
X
X
ILLEGAL
L
H
L
X
X
X
ILLEGAL
L
L
X
X
X
X
ILLEGAL
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參數(shù)描述
KBE00G003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2
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KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
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