參數(shù)資料
型號(hào): KBE00F005A-D411
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mb NAND*2 + 256Mb Mobile SDRAM*2
中文描述: 的512Mb的NAND * 2 256Mb的移動(dòng)SDRAM * 2
文件頁數(shù): 31/87頁
文件大?。?/td> 1353K
代理商: KBE00F005A-D411
KBE00F005A-D411
MCP MEMORY
June 2005
31
Revision 1.0
Figure 8. Read1 Operation
Start Add.(4Cycle)
00h
A
0
~ A
7
& A
9
~ A
26
Data Output(Sequential)
(00h Command)
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
I/O
0
~
7
RE
t
R
* After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
array (00h) at next cycle.
(01h Command)*
Data Field
Spare Field
1st half array
2st half array
1st half array
2st half array
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